TITLE

Pyroelectric properties of AlN

AUTHOR(S)
Fuflyigin, V.; Salley, E.; Osinsky, A.; Norris, P.
PUB. DATE
November 2000
SOURCE
Applied Physics Letters;11/6/2000, Vol. 77 Issue 19
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Pyroelectric properties of high-quality (0001)AlN films grown on (111) Si were studied. The pyroelectric coefficient p was measured using the dynamic method. The value was in the range of 6-8 μC/(m2 K), yielding a p/ε figure-of-merit of 0.8-0.95. The pyroelectric coefficient was independent of temperature and applied bias. Leakage current as low as 1-2x10[sup -9] A/cm[sup 2] was measured at 5 V on large area devices. The obtained results indicate that AlN films can be used in pyroelectric thin-film devices. © 2000 American Institute of Physics.
ACCESSION #
4413226

 

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