Near interface H[sup +] trapping and its influence on H[sup +] transport in hydrogenated Unibond buried oxides

Macfarlane, P. J.; Macfarlane, P.J.; Stahlbush, R. E.; Stahlbush, R.E.
November 2000
Applied Physics Letters;11/6/2000, Vol. 77 Issue 19
Academic Journal
The effects of applied oxide field and H[sup +] concentration on the transport of mobile protons across a buried oxide layer are examined in hydrogenated Unibond material. The H+ travel slower when moving from the substrate Si/SiO[sub 2] to the top Si/SiO[sub 2] interfaces than in the opposite direction. The effect of the self-field due to H[sup +] in the oxide is insignificant even when that field is larger than the applied field. These results suggest that detrapping from defects near the Si/SiO[sub 2] interfaces plays a critical role in the H[sup +] transport. © 2000 American Institute of Physics.


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