Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions

Pearce, Joshua M.; Koval, Randy J.; Ferlauto, Andre S.; Collins, Robert W.; Wronski, Christopher R.; Yang, Jeffrey; Guha, Subbhendu
November 2000
Applied Physics Letters;11/6/2000, Vol. 77 Issue 19
Academic Journal
Contribution of carrier recombination from the p/i interface regions and the bulk to the dark current-voltage (J[sub D]-V) and short-circuit current-open-circuit voltage (J[sub sc]-V[sub oc]) characteristics of hydrogenated amorphous-silicon (a-Si:H) p-i-n and n-i-p solar cells have been separated, identified, and quantified. Results are presented and discussed here which show that a maximum 1 sun V[sub oc] for a given bulk material can be validly extrapolated from bulk dominated J[sub sc]-V[sub oc] characteristics at low illumination intensities. © 2000 American Institute of Physics.


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