Noninvasive investigation of defects in multicrystalline silicon and photovoltaic devices by photomagnetic detection using superconducting quantum interference device magnetometers

Beyer, J.; Zhong, Q.; Schurig, TH.
November 2000
Applied Physics Letters;11/6/2000, Vol. 77 Issue 19
Academic Journal
An approach for the localization and characterization of electrically active defects in multicrystalline silicon and of artefacts in photovoltaic devices is presented. The essential idea of the method is the noninvasive magnetic detection of photocurrents generated in the sample by local illumination. Magnetic imaging with high spatial and magnetic resolution is performed by scanning the sample under investigation and synchronously measuring the magnetic field of the photocurrents using highly sensitive superconducting quantum interference device magnetometers. The technique enables the nondestructive and nonpolluting detection and investigation of electrically active grain boundaries in multicrystalline silicon wafers. Results obtained from photovoltaic devices show that typical, performance-limiting defects can be localized, as they cause distinct features in the magnetic field topography. © 2000 American Institute of Physics.


Related Articles

  • Effect of hydrogen dilution of silane on optoelectronic properties in glow-discharged hydrogenated silicon films. Shirafuji, J.; Nagata, S.; Kuwagaki, M. // Journal of Applied Physics;11/1/1985, Vol. 58 Issue 9, p3661 

    Presents information on a study that measured electrical and photoelectric properties of glow-discharged hydrogenated silicon films as a function of hydrogen dilution. Research methodology; Results and discussion on the study.

  • Investigation of electrical and optical measurements of silicon nanocrystals embedded in SiO matrix. Karmouch, R.; Savard, G.; Barba, D.; Koshel, D.; Martin, F.; Ross, G. // Journal of Materials Science: Materials in Electronics;Jun2013, Vol. 24 Issue 6, p1837 

    Samples containing silicon nanocrystals (Si-nc) with radius of approximately 3 nm embedded in SiO exhibit a strong PL emission around 750 nm because of the quantum confinement of the exciton inside the Si-nc. To characterize the contribution of absorption by Si-nc to the photo-electric...

  • Photoabsorption and photoelectric process in Si nanocrystallites. Anchala; Purohit, S. P.; Mathur, K. C. // Applied Physics Letters;1/24/2011, Vol. 98 Issue 4, p043106 

    Using the effective mass approximation, we investigate the photoabsorption and photoelectric process in the conduction band of a single electron charged spherical Si semiconductor quantum dot nanostructure embedded in the amorphous SiO2 matrix. We consider the potential barrier at the interface...

  • Ferrofluidics orders.  // Electronic News;8/28/95, Vol. 41 Issue 2080, p57 

    Informs that Ferrofluidics received additional multiple orders valued at $13 million for the company's CZ-150 silicon crystal-growing systems for MEMC Electronic Materials.

  • CGNPC Started Photoelectricity-Biomass Energy Integrated Power Generation Project in Singapore.  // China Chemical Reporter;6/6/2012, Vol. 23 Issue 11, p15 

    The article presents information on the beginning of a new Photoelectricity-Biomass Energy Integrated Power Generation Project in Singapore by China Guangdong Nuclear Power Holding Co. Ltd. (CGNPC).

  • Millisecond minority carrier lifetimes in n-type multicrystalline silicon. Cuevas, Andres; Kerr, Mark J.; Samundsett, Christian; Ferrazza, Francesca; Coletti, Gianluca // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4952 

    Exceptionally high minority carrier lifetimes have been measured in n-type multicrystalline silicon (mc-Si) grown by directional solidification and subjected to phosphorus gettering. The highest effective lifetimes, up to 1.6 ms averaged over several grains and 2.8 ms within some of them, were...

  • Infrared absorption study on carbon and oxygen behavior in Czochralski silicon crystals. Shimura, F.; Baiardo, J. P.; Fraundorf, P. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p941 

    The behavior of carbon atoms in relation to oxygen precipitation in Czochralski silicon crystals subjected to various heat treatments is investigated by means of infrared (IR) spectroscopy. It is shown that carbon atoms enhance and modify oxygen precipitation both at 750 and at 1000 °C....

  • Growth characteristics of oxide precipitates in heavily doped silicon crystals. Matsumoto, Satoru; Ishihara, Ichiro; Kaneko, Hiroyuki; Harada, Hirofumi; Abe, Takao // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p957 

    The doping concentration dependence on the growth of oxide precipitates has been studied using transmission electron microscopy in phosphorus and boron-doped silicon crystals. Samples were annealed at 800 and 850 °C for 24–384 h in dry nitrogen. In phosphorus-doped silicon, the...

  • Time-resolved reflectivity measurements during explosive crystallization of amorphous silicon. Bruines, J. J. P.; van Hal, R. P. M.; Boots, H. M. J.; Polman, A.; Saris, F. W. // Applied Physics Letters;11/3/1986, Vol. 49 Issue 18, p1160 

    Explosive crystallization of Cu implanted amorphous silicon during irradiation by a 32-ns FWHM ruby laser pulse has been studied using time-resolved reflectivity measurements and Rutherford backscattering spectrometry. From interferences in the reflectivity, the position and the velocity of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics