TITLE

Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers

AUTHOR(S)
Klopf, F.; Reithmaier, J. P.; Reithmaier, J.P.; Forchel, A.
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Highly efficient 980 nm GaInAs/(Al)GaAs quantum-dot (QD) and quantum-well (QW) lasers based on a single active layer have been fabricated and compared in view of high-power applications. QD lasers show a significantly reduced temperature shift of the emission wavelength and achieve external quantum efficiencies of 80% (>1 W/A for 1-mm-long devices). For longer cavity lengths (>2.5 mm), QD lasers show lower threshold current densities than QW lasers. Threshold current densities as low as 54 A/cm2 are reached. © 2000 American Institute of Physics.
ACCESSION #
4413164

 

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