Effect of grain boundaries on carrier lifetime in chemical-vapor-deposited diamond film

Yoneda, Hitoki; Tokuyama, Kazutatsu; Tokuyaman, Kazutatsu; Yamazaki, Riichi; Ueda, Ken-ichi; Yamamoto, Hironori; Baba, Kazuhiro
September 2000
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
Academic Journal
Using the reflective measurements, the effect of grain boundaries on the lifetime of photogenerated carriers was investigated for chemical-vapor-deposited (CVD) diamond films. To investigate the effect of grain boundaries on the carrier dynamics, photons having energy lower than the band gap energy of a single crystal of diamond were used for pumping. For a 4.8 eV photon, the measured lifetime was several tens of picoseconds, and that was consistent with photoconductive current measurements. However, a dramatic decrease of the carrier lifetime was observed in the case of 3.2 eV irradiation. The variation of the lifetime inside the single grain was measured by a microscopic pump-probe method. The carrier lifetime near the grain boundary decreased from 5 to 8 ps at the center to 0.35-0.5 ps. This decreased lifetime and the carrier generation efficiency with lower energy photon had a negative correlation. To explain this mechanism, we considered the decrease in lifetime to be related to the density of the imperfection or mid-band gap states inside the single-CVD-polycrystalline grain. © 2000 American Institute of Physics.


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