Infrared absorption peak due to Ta=O bonds in Ta[sub 2]O[sub 5] thin films

Ono, Haruhiko; Koyanagi, Ken-ichi
September 2000
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
Academic Journal
Ta[sub 2]O[sub 5] films deposited on Si substrates were investigated using transmission Fourier-transform infrared spectroscopy. We found a new absorption peak at 2340 cm[sup -1] that can be characterized as a stretching vibration mode due to Ta=O bonds in the films. This peak appeared following annealing in O[sub 2] ambient, but not in N[sub 2] ambient. It was located at 2335 cm[sup -1] in amorphous Ta[sub 2]O[sub 5] films and shifted to 2340 cm[sup -1] after crystallization by annealing at over 700 °C. The bonds associated with the peak were homogeneously distributed in the film. We demonstrated that Ta[sub 2]O[sub 5] films can include strong double bonds between Ta and O (Ta=O) in the structure, independent of whether they are crystalline or amorphous. © 2000 American Institute of Physics.


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