Thermal expansion of bulk and homoepitaxial GaN

Kirchner, V.; Heinke, H.; Hommel, D.; Domagala, J. Z.; Domagala, J.Z.; Leszczynski, M.
September 2000
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
Academic Journal
The thermal behavior of Mg-doped and intentionally undoped bulk crystals and homoepitaxial GaN was investigated in a wide temperature range from 12 to 600 K. With high-resolution x-ray diffraction, both lattice parameters a and c were determined and the thermal expansion coefficients were calculated. Within the experimental accuracy, mean values were extracted for the temperature ranges 12-100, 100-250, and 250-600 K. These values are essential, especially, for the interpretation of measurements of other GaN properties performed at low temperatures. © 2000 American Institute of Physics.


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