Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC

Jernigan, G. G.; Jernigan, G.G.; Stahlbush, R. E.; Stahlbush, R.E.; Saks, N. S.; Saks, N.S.
September 2000
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
Academic Journal
X-ray photoelectron spectroscopy and sputter depth profiling were used to investigate SiO[sub 2] grown on 4H- and 6H-SiC with and without a reoxidation procedure. The oxides grown and oxide-substrate interfaces formed on 4H and 6H were similar in chemistry but different from Si(100). Reoxidation changes the structure of the oxide and the abruptness of the oxide-substrate interface. We propose a model for SiC oxidation where a transition layer containing Si-Si bonds is produced between the oxide and the SiC substrate.


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