Growth of step-free surfaces on device-size (0001)SiC mesas

Powell, J. Anthony; Neudeck, Philip G.; Trunek, Andrew J.; Beheim, Glenn M.; Matus, Lawrence G.; Hoffman, Richard W.; Hoffman Jr., Richard W.; Keys, Luann J.
September 2000
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
Academic Journal
It is believed that atomic-scale surface steps cause defects in single-crystal films grown heteroepitaxially on SiC substrates. A method is described whereby surface steps can be grown out of existence on arrays of device-size mesas on commercial "on-axis" SiC wafers. Step-free mesas with dimensions up to 200 μm square have been produced on 4H-SiC wafers and up to 50 μm square on a 6H-SiC wafer. A limiting factor in scaling up the size and yield of the step-free mesas is the density of screw dislocations in the SiC wafers. The fundamental significance of this work is that it demonstrates that two-dimensional nucleation of SiC can be suppressed while carrying out step-flow growth on (0001)SiC. The application of this method should enable the realization of improved heteroepitaxially-grown SiC and GaN device structures. © 2000 American Institute of Physics.


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