Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electron diffraction

Cimalla, V.; Zekentes, K.
September 2000
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
Academic Journal
Germanium islands have been grown on Si(001) by solid-source molecular-beam epitaxy at temperatures between 325 and 900 °C. The formation of metastable {105} faceted clusters and macroislands was investigated by real-time reflection high-energy electron diffraction. Up to 600 °C, the two-dimensional (2D)-three-dimensional (3D) growth transition through the formation of hut clusters appears at a temperature-independent critical thickness, while the coalescence to macroislands is thermally activated. An activation barrier was also found for the 2D-3D growth transition directly to macroislands at growth temperatures above 600 °C. The crossing of the two competing transitions at 600 °C determines the two growth regimes. © 2000 American Institute of Physics.


Related Articles

  • Self-assembled Ge nanowires grown on Si(113). Omi, Hiroo; Ogino, Toshio // Applied Physics Letters;10/13/1997, Vol. 71 Issue 15, p2163 

    Investigates the growth of coherent germanium islands on silicon(113) substrates by molecular beam epitaxy. Use of atomic force microscopy and reflection high energy electron diffraction; Description of surface morphology; Result of the anisotropic strain relief mechanism on the substrates.

  • Growth of high quality Ge films on Si(111) using Sb as surfactant. Larsson, Mats I.; Wei-Xin Ni // Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1409 

    Details the growth and characterization of high quality germanium (GE) layers on silicon(111) substrates. Indication of Ge layer-by-layer epitaxy using cusplike reflection high-energy electron diffraction (RHEED) intensity oscillations; Determination of crystalline quality through high...

  • Epitaxial growth of Si by ArF laser-excited supersonic free jets of Si[sub 2]H[sub 6]. Motooka, T.; Abe, H. // Applied Physics Letters;12/20/1993, Vol. 63 Issue 25, p3473 

    Examines the epitaxial growth of silicon from argon fluoride laser-excited supersonic free jets of Si[sub 2]H[sub 6]. Use of reflection high-energy electron diffraction, growth rate and atomic force microscopies; Observation of layer-by-layer epitaxial growth at substrate temperature; Effect of...

  • Triethylgallium adsorption on Si(100) and Si(111) surfaces. Hirayama, Hiroyuki; Sasaoka, Chiaki; Tatsumi, Toru; Ohshita, Yoshio // Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p126 

    Triethylgallium (TEG) adsorption on Si(100) 2×1 and Si(111) 7×7 surfaces was studied by reflection high-energy electron diffraction (RHEED) and x-ray photoelectron spectroscopy (XPS). At room temperature, TEG molecules nondissociatively adsorbed on Si surface. Being judged from the Ga...

  • Kinetics of Si[sub 1-x]Ge[sub x]/Si(0...x...1) growth by molecular beam epitaxy using disilane and.. Zhang, F.C.; Singh, J. // Applied Physics Letters;7/3/1995, Vol. 67 Issue 1, p85 

    Examines the molecular beam epitaxy of Si[sub 1-x]Ge[sub x] alloys using disilane and germanium as sources. Impact of germanium on silicon incorporation rate; Establishment of growth via adatom migration; Use of the reflection high energy electron diffraction in monitoring the growth process.

  • Competitive kinetic processes during homoepitaxial growth on Ge(111). Yokotsuka, T.; Wilby, M.R.; Vvedensky, D.D.; Kawamura, T.; Fukutani, K.; Ino, S. // Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1673 

    Examines the monolayer and bilayer growth modes during gas-source molecular beam epitaxy of germanium(111). Measurement of reflection high-energy electron diffraction; Temperature dependence of RHEED oscillation period; Implication of growth mode transition for thermal diffusion.

  • Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high-energy electron diffraction. Ichikawa, M.; Doi, T. // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1141 

    Si(111) surface topography changes during Si molecular beam epitaxial growth were observed by reflection electron microscope images using microprobe reflection high-energy electron diffraction (RHEED). When RHEED intensity oscillations were observed at low substrate temperature (350 °C), it...

  • Molecular beam epitaxial growth of Si on Ga-activated Si(111) surface. Nakahara, Hitoshi; Ichikawa, Masakazu // Applied Physics Letters;9/28/1992, Vol. 61 Issue 13, p1531 

    Examines the molecular beam epitaxial growth of silicon (Si) on gallium (Ga)-activated Si(111) surface by microprobe reflection high-energy electron diffraction. Comparison of film crystallinity grown on Ga adsorbed and clean Si surfaces; Measurement of substrate temperature dependence for...

  • Reflection high-energy electron diffraction study of the GaAs:Si:GaAs system. Fahy, M.R.; Ashwin, M.J. // Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1805 

    Examines the deposition of silicon on gallium arsenide through reflection high-energy electron diffraction. Factors contributing to the reconstruction of surface structures; Overgrowth of gallium arsenide through molecular beam epitaxy; Maintenance of arsenic flux during the deposition stages.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics