Paramagnetic defects at the interface of ultrathin oxides grown under vacuum ultraviolet photon excitation on (111) and (100) Si

Stesmans, A.; Afanas'ev, V. V.; Afanas'ev, V.V.
September 2000
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
Academic Journal
Electron-spin-resonance monitoring of Si dangling-bond-type interface defects is used to study ultrathin (∼20 Å) Si-oxide films grown by vacuum ultraviolet (VUV)-enhanced oxidation of Si at 300 K. Large densities (up to ∼9x10[sup 12] cm[sup -2]) of P[sub b] and P[sub b0] centers (interfacial Si[sub 3]=Si·) are observed in VUV-grown (111) and (100) Si/SiO[sub 2], respectively. As compared to standard thermal Si/SiO[sub 2], two major differences emerge: the VUV Si/SiO[sub 2] interface is under substantially enhanced stress, while no P[sub b1] defects are discerned in VUV (100) Si/SiO[sub 2]. It is inferred that P[sub b1] generation requires a minimum amount of oxide relaxation. Microscopic understanding is provided for the known inferior electrical interface quality threatening low-thermal-budget oxide fabrication. © 2000 American Institute of Physics.


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