Temperature-dependent carrier trapping processes in short period quantum wire superlattices grown by flow rate modulation epitaxy

Liu, X. Q.; Liu, X.Q.; Sasaki, A.; Ohno, N.; Wang, Xue-Lun; Xue-Lun Wang; Ogura, Mutsuo
September 2000
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
Academic Journal
We report the first systematic investigation of the temperature-dependent carrier transferring processes of very short period V-grooved GaAs/AlGaAs quantum wire superlattice structures grown by flow rate-modulated metal-organic vapor phase epitaxy. The one monolayer (1 ML) fluctuation causes carrier confinement in sidewall (111) facet superlattice structures, and is shown to play an important role in the carrier transferring process. At low temperatures, the carrier transfer is blocked by the barriers of 1 ML fluctuation, while at high temperatures the carrier transfer from (111) superlattice to the wire region is shown to be very efficient after thermally overcoming the barriers. The temperature-dependent decay times of the different parts give direct evidence of the carrier transferring process, which demonstrates that the carriers can trap into the wire region within 50 ps at temperatures higher than 100 K. © 2000 American Institute of Physics.


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