Experimental proof-of-principle investigation of enhanced Z[sub 3D]T in (001) oriented Si/Ge superlattices

Koga, T.; Cronin, S. B.; Cronin, S.B.; Dresselhaus, M. S.; Dresselhaus, M.S.; Liu, J. L.; Liu, J.L.; Wang, K. L.; Wang, K.L.
September 2000
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
Academic Journal
An experimental proof-of-principle of an enhanced Z[sub 3D]T (thermoelectric figure of merit) is demonstrated using (001) oriented Si/Ge superlattices. The highest value of the experimental Z[sub 3D]T at 300 K for a (001) oriented Si(20 Å)/Ge(20 Å) superlattice is 0.1 using κ=5 Wm[sup -1] K[sup -1], for the in-plane thermal conductivity, which is a factor of seven enhancement relative to the estimated value of Z[sub 3D]T=0.014 for bulk Si. The good agreement between experiment and theory validates our modeling approach (denoted as "carrier pocket engineering") to design superlattices with enhanced values of Z[sub 3D]T. Proposals are made to enhance the experimental values of Z[sub 3D]T for Si/Ge superlattices even further. © 2000 American Institute of Physics.


Related Articles

  • Self-consistent analysis of persistent photoconductivity data in Si delat-doped AlxGa1-xAs... Mejri, H.; Jazia, A. Ben // Journal of Applied Physics;11/1/1998, Vol. 84 Issue 9, p5060 

    Examines the performance of the Hall measurements on a series of silicon (Si) delta-doped AlxGa1-xAs (x=0.32) superlattices. Calculation of the minibands fore the delta-doping AlxGa1-xAs:Si superlattices; Information on electrical properties of this defect; Reference to these measurements.

  • Characterization of superlattices based on amorphous silicon. Hundhausen, M.; Santos, P.; Ley, L.; Habraken, F.; Beyer, W.; Primig, R.; Gorges, G. // Journal of Applied Physics;1/15/1987, Vol. 61 Issue 2, p556 

    Presents a study that characterized the structure of superlattices based on amorphous silicon. Analysis of the optical electron micrographs of the amorphous silicon superlattices; Examination of the scanning electron microscopic images of doping superlattices; Evaluation of the hydrogen...

  • Calculation of optical absorption associated with indirect transitions in silicon n-i-p-i structures. de Sterke, C. Martijn // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p3187 

    Studies indirect transitions in silicon n-i-p-i structures or superlattices. Details on the structures; Optical properties of the structures; Results of the study.

  • Investigation of GaAs/AlxGa1-xAs and InyGa1-yAs/GaAs superlattices on Si substrates. Reddy, U. K.; Ji, G.; Huang, D.; Munns, G.; Morkoç, H. // Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1748 

    We have studied the optical properties of lattice-matched GaAs/AlxGa1-xAs and InyGa1-yAs/GaAs strained-layer superlattices grown on Si substrates using the photoreflectance technique. These preliminary results show that good quality III-V epilayers can be grown on Si. The experimental data were...

  • Wannier�Stark Localization in the Natural Superlattice of Silicon Carbide Polytypes. Sankin, V. I. // Semiconductors;Jul2002, Vol. 36 Issue 7, p717 

    Results of a study of silicon carbide polytypes under high electric fields are presented. The presence of a natural superlattice in silicon carbide polytypes is shown to introduce a miniband structure into the conduction band, which leads to a number of effects: negative differential...

  • Electronic transitions in a SimGen strained monolayer superlattice measured by photoreflectance. Dafesh, P. A.; Arbet, V.; Wang, K. L. // Applied Physics Letters;4/9/1990, Vol. 56 Issue 15, p1498 

    The first photoreflectance spectrum from a short-period strain-symmetrized SimGen superlattice has been measured at 87 K. Fifteen electronic transitions were measured between 1.1 and 2.7 eV and fit well to a third derivative functional form. Most of the transition energies were calculated using...

  • Novel amorphous silicon doping superlattice device with bidirectional S-shaped negative.... Liu, C.R.; Fang, Y.K. // Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p177 

    Investigates the fabrication of amorphous silicon doping superlattice device with bidirectional S-shaped negative differential characteristics. Reason for the occurrence of S-shaped switching phenomenon; Application of electronic transportation theory; Illustration of band diagram at thermal...

  • GexSi1-x strained-layer superlattice waveguide photodetectors operating near 1.3 μm. Temkin, H.; Pearsall, T. P.; Bean, J. C.; Logan, R. A.; Luryi, S. // Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p963 

    Properties of GexSi1-x strained-layer p-i-n detectors, in which the strained-layer superlattice itself was used as an absorption region, have been studied for the first time. These devices were grown on (100)Si by molecular beam epitaxy. Using waveguide geometry we have obtained internal quantum...

  • Interlayer transition zones in Mo/Si superlattices. Yulin, S.; Feigl, T.; Kuhlmann, T.; Kaiser, N.; Fedorenko, A. I.; Kondratenko, V. V.; Poltseva, O. V.; Sevryukova, V. A.; Zolotaryov, A. Yu.; Zubarev, E. N. // Journal of Applied Physics;8/1/2002, Vol. 92 Issue 3, p1216 

    The formation of interlayer transition zones (ITZs) in sputtered Mo/Si multilayer structures was studied by means of cross-section electron microscopy and grazing incidence reflectivity measurements. For the evaluation and calculation of interface effects the multiperiodic design of Mo/Si...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics