TITLE

Experimental proof-of-principle investigation of enhanced Z[sub 3D]T in (001) oriented Si/Ge superlattices

AUTHOR(S)
Koga, T.; Cronin, S. B.; Cronin, S.B.; Dresselhaus, M. S.; Dresselhaus, M.S.; Liu, J. L.; Liu, J.L.; Wang, K. L.; Wang, K.L.
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An experimental proof-of-principle of an enhanced Z[sub 3D]T (thermoelectric figure of merit) is demonstrated using (001) oriented Si/Ge superlattices. The highest value of the experimental Z[sub 3D]T at 300 K for a (001) oriented Si(20 Å)/Ge(20 Å) superlattice is 0.1 using κ=5 Wm[sup -1] K[sup -1], for the in-plane thermal conductivity, which is a factor of seven enhancement relative to the estimated value of Z[sub 3D]T=0.014 for bulk Si. The good agreement between experiment and theory validates our modeling approach (denoted as "carrier pocket engineering") to design superlattices with enhanced values of Z[sub 3D]T. Proposals are made to enhance the experimental values of Z[sub 3D]T for Si/Ge superlattices even further. © 2000 American Institute of Physics.
ACCESSION #
4413139

 

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