Lateral epitaxy overgrowth of GaN with NH[sub 3] flow rate modulation

Zhang, X.; Dapkus, P. D.; Dapkus, P.D.; Rich, D. H.; Rich, D.H.
September 2000
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
Academic Journal
We demonstrate the effects of NH[sub 3] flow modulation on the lateral growth rate and morphology of GaN stripes employing lateral epitaxial overgrowth (LEO) by metalorganic chemical vapor deposition. The self-limiting growth mechanism, enhanced Ga diffusion on the (0001) plane, and Ga lateral supply are used to explain our observations. A lateral overgrowth rate to a vertical growth rate ratio of 2.1 and fully coalesced LEO GaN stripes after 1 h growth have been achieved. © 2000 American Institute of Physics.


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