Hydrogen passivation of deep levels in n-GaN

Hierro, A.; Ringel, S. A.; Ringel, S.A.; Hansen, M.; Speck, J. S.; Speck, J.S.; Mishra, U. K.; Mishra, U.K.; DenBaars, S. P.; DenBaars, S.P.
September 2000
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
Academic Journal
Differential postgrowth hydrogen passivation of deep levels in n-GaN grown by metal-organic chemical vapor deposition has been directly observed by means of both deep level transient spectroscopy and deep level optical spectroscopy. Two deep levels found at E[sub c]-E[sub t]=0.62 and 1.35 eV show strong H passivation effects, with their concentrations decreasing by a factor of >=30 and ∼14, respectively. The decrease in the 0.62 eV trap concentration together with its correlation with the presence of Mg in n-GaN is consistent with Mg-H complex formation. A band of closely spaced deep levels observed at E[sub c]-E[sub t]=2.64-2.80 eV narrows to E[sub c]-E[sub t]=2.74-2.80 eV after hydrogenation, consistent with hydrogen complexing with V[sub Ga][sup 3-] defects as anticipated by earlier theoretical results. Finally, a deep level at E[sub c]-E[sub t]=3.22 eV likely related to background acceptors remains unaffected by hydrogen. © 2000 American Institute of Physics.


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