Structural and dielectric properties of epitaxial Ba[sub 1-x]Sr[sub x]TiO[sub 3]/Bi[sub 4]Ti[sub 3]O[sub 12]/ZrO[sub 2] heterostructures grown on silicon

Canedy, C. L.; Canedy, C.L.; Aggarwal, S.; Li, Hao; Hao Li; Venkatesan, T.; Ramesh, R.; Van Keuls, F. W.; Van Keuls, F.W.; Romanofsky, R. R.; Romanofsky, R.R.; Miranda, F. A.; Miranda, F.A.
September 2000
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
Academic Journal
We report on the dielectric properties of an epitaxial heterostructure comprised of Ba[sub 1-x]Sr[sub x]TiO[sub 3], Bi[sub 4]Ti[sub 3]O[sub 12], and (ZrO[sub 2])[sub 0.91](Y[sub 2]O[sub 3])[sub 0.09] grown on silicon substrates for potential use in microwave devices. Careful x-ray analysis indicates crystallographic alignment of all layers and transmission electron microscopy and Auger analysis reveals high quality epitaxy with minimal interdiffusion. The viability of using such heterostructures in actual microwave devices was assessed by incorporating the films in a coupled microstripline phase shifter design. The phase shifter devices, operating in the Ku band, had losses of less than 4 dB with a maximum phase shift of nearly 40° at 40 V. We compare this performance with a (Ba, Sr)TIO[sub 3]/MgO phase shifter. These results presented represent significant progress towards integrating ferroelectric films with conventional silicon technology. © 2000 American Institute of Physics.


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