TITLE

Electron saturation velocity of GaInP deduced in a GaInP/GaAs/GaInP double heterojunction bipolar transistor

AUTHOR(S)
Hsin, Yue-Ming; Yue-Ming Hsin; Hsu, Shih-Tzung; Shih-Tzung Hsu; Fan, Chen-Chung; Chen-Chung Fan
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaInP/GaAs/GaInP double heterojunction bipolar transistors have been fabricated for the study of electron saturation velocity (v[sub sat]) in GaInP. The necessary composite design at the base-collector junction, which effectively reduces the conduction band spike and avoids the premature Kirk effect, enables us to use the Kirk effect to study v[sub sat]. The deduced electron saturation velocity in GaInP is ∼5x10[sup 6] cm/sec. © 2000 American Institute of Physics.
ACCESSION #
4413120

 

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