TITLE

Photovoltaic heterostructure devices made of sequentially adsorbed poly(phenylene vinylene) and functionalized C[sub 60]

AUTHOR(S)
Mattoussi, H.; Rubner, M. F.; Rubner, M.F.; Zhou, F.; Kumar, J.; Tripathy, S. K.; Tripathy, S.K.; Chiang, L. Y.; Chiang, L.Y.
PUB. DATE
September 2000
SOURCE
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the preparation and characterization of rectifying photovoltaic heterostructure devices made of poly(phenylene vinylene), PPV, and C[sub 60]. The heterojunctions were built from solution using the technique of layer-by-layer sequential adsorption. This technique permits one to control the heterostructure at the molecular scale. Upon illumination with a laser beam, the devices showed large photoresponses (current and voltage) that resulted from a photoinduced electron transfer between the PPV (donor layer) and the C[sub 60] (acceptor layer). The photocurrent was found to increase with the laser power and with the photon energy of the incident radiation. Also, a constant high photovoltage response of ∼700-800 mV was measured. Analysis of the time dependence of the photocurrent rise and decay, when the device was illuminated with a modulated square wave signal (chopped laser beam), permitted us to draw an analogy between the present heterojunction and a circuit made of a capacitor and a resistance in series. © 2000 American Institute of Physics.
ACCESSION #
4413119

 

Related Articles

  • The effect of carbon on the valence band offset of compressively strained.... Chang, C.L.; Amour, A. St. // Applied Physics Letters;3/24/1997, Vol. 70 Issue 12, p1557 

    Examines the effect of carbon on the valence band offset of compressively strained silicon[sub 1-x-y]germanium[sub x]carbon[sub y]/(100) silicon heterojunctions. Deposition of the heterojunction by thermal chemical vapor deposition; Measurement of valence band offset by complex admittance...

  • Heavily doped p-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4. Yang, L. W.; Wright, P. D.; Eu, V.; Lu, Z. H.; Majerfeld, A. // Journal of Applied Physics;9/1/1992, Vol. 72 Issue 5, p2063 

    Discusses a study which described heavily doped p-GaAs properties grown by low-pressure organometallic vapor phase epitaxy using liquid CCI[sub4]. Usefulness of a novel photoluminescence technique; Description of a p type dopant considered promising in AlGaAs/GaAs heterostructures; Properties...

  • Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1-yCy on Si(001). Osten, H. J.; Kim, Myeongcheol; Pressel, K.; Zaumseil, P. // Journal of Applied Physics;12/15/1996, Vol. 80 Issue 12, p6711 

    Investigates the molecular beam epitaxial growth of Si[sub1-y]C[suby] alloys pseudomorphically strained on the reconstructed Si(001) as a function of growth conditions. Relationship between substitutional and interstitial carbon (C) incorporation; Factors that led to an increased...

  • Al-Ga interdiffusion in heavily carbon-doped AlxGa1-xAs-GaAs quantum well heterostructures. Guido, L. J.; Cunningham, B. T.; Nam, D. W.; Hsieh, K. C.; Plano, W. E.; Major, J. S.; Vesely, E. J.; Sugg, A. R.; Holonyak, N.; Stillman, G. E. // Journal of Applied Physics;2/15/1990, Vol. 67 Issue 4, p2179 

    Describes impurity-induced layer disordering experiments on quantum well heterostructures doped with carbon. Importance of crystal surface interaction with ambient and the so-called Fermi-level effect; Determination of the influence of crystal surface stoichiometry on aluminum-gallium...

  • Direct optical measurement of the valence band offset of p[sup +] Si[sub 1-x-y]Ge[sub x]C[sub y]/p[sup -] Si(100) by heterojunction internal photoemission. Chang, C. L.; Rokhinson, L. P.; Sturm, J. C. // Applied Physics Letters;12/14/1998, Vol. 73 Issue 24 

    Optical absorption measurements have been performed to study the effect of substitutional carbon on the valence band offset of compressively strained p[sup +] Si[sub 1-x-y]Ge[sub x]C[sub y]/(100) p[sup -] Si. The compressively strained p[sup +] Si[sub 1-x-y]Ge[sub x]C[sub y]/(100) p[sup -] Si...

  • Negative magnetoresistance in Cr-containing diamond-like carbon-based heterostructures. Colón Santana, Juan A.; Singh, V.; Palshin, V.; Handberg, E. M.; Petukhov, A. G.; Losovyj, Y. B.; Sokolov, A.; Ketsman, Ihor // Applied Physics A: Materials Science & Processing;Mar2010, Vol. 98 Issue 4, p811 

    We have characterized the local structure around the Cr atom, as a function of Cr content, in films of chromium-doped hydrogenated amorphous diamond-like carbon (Cr-DLC) synthesized by plasma-enhanced chemical vapor deposition (PECVD). The composition appears to be related to the structure and...

  • Calculation of the Electronic and Thermal Properties of C/BN Nanotubular Heterostructures. Enyashin, A. N.; Seifert, G.; Ivanovskii, A. L. // Inorganic Materials;Jun2005, Vol. 41 Issue 6, p595 

    Modeling results are presented on the electronic, structural, and thermal properties of a (5,5)C@(17,0)BN-NT tubular heterostructure (a metal-like carbon nanotube inside a dielectric boron nitride nanotube) regarded as a prototype of nanocables. It is shown that the electronic properties of the...

  • Nanotubular boron-carbon heterojunctions. Kunstmann, Jens; Quandt, Alexander // Journal of Chemical Physics;Dec2004, Vol. 121 Issue 21, p10680 

    Linear nanotubular boron-carbon heterojunctions are systematically constructed and studied with the help of ab initio total energy calculations. The structural compatibility of the two classes of materials is shown, and a simple recipe that determines all types of stable linear junctions is...

  • A selector device based on graphene-oxide heterostructures for memristor crossbar applications. Wang, Miao; Lian, Xiaojuan; Pan, Yiming; Zeng, Junwen; Wang, Chengyu; Liu, Erfu; Wang, Baigeng; Yang, J.; Miao, Feng; Xing, Dingyu // Applied Physics A: Materials Science & Processing;Aug2015, Vol. 120 Issue 2, p403 

    Most of the potential applications of memristive devices adopt crossbar architecture for ultra-high density. One of the biggest challenges of the crossbar architecture is severe residue leakage current (sneak path) issue. A possible solution is introducing a selector device with strong nonlinear...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics