Staircase band gap Si[sub 1-x]Ge[sub x]/Si photodetectors

Lo, Zhiyun; Jiang, Ruolian; Zheng, Youdou; Zang, Lan; Chen, Zhizhong; Zhu, Shunming; Cheng, Xuemei; Liu, Xiabing
September 2000
Applied Physics Letters;9/4/2000, Vol. 77 Issue 10
Academic Journal
We fabricated Si[sub 1-x]Ge[sub x]/Si photodetectors by using a staircase band gap Si[sub 1-x]Ge[sub x]/Si structure. These devices exhibit a high optical response with a peak responsive wavelength at 0.96 μm and a responsivity of 27.8 A/W at -5 V bias. Excellent electrical characteristics evidenced by good diode rectification are also demonstrated. The dark current density is 0.1 pA/μm[sup 2] at -2 V bias, and the breakdown voltage is -27 V. The high response is explained as the result of a staircase band gap by theoretical analysis. © 2000 American Institute of Physics.


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