Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH[sub 3]

He, Maoqi; Maoqi He; Minus, Indira; Zhou, Piezhen; Piezhen Zhou; Mohammed, S. Noor; Halpern, Joshua B.; Jacobs, Randy; Sarney, Wendy L.; Salamanca-Riba, Lourdes; Vispute, R. D.; Vispute, R.D.
December 2000
Applied Physics Letters;12/4/2000, Vol. 77 Issue 23
Academic Journal
Large-scale wurtzite GaN nanowires and nanotubes were grown by direct reaction of metal gallium vapor with flowing ammonia in an 850-900 °C horizontal oven. The cylindrical structures were as long as 500 μm with diameters between 26 and ∼100 nm. Transmission electron microscopy, scanning electron microscopy, and x-ray diffraction were used to measure the size and structures of the samples. Preliminary results show that the size of the nanowires depends on the temperature and the NH[sub 3] flow rate. The growth mechanism is discussed briefly. The simple method presented here demonstrates that GaN nanowires can be grown without the use of a template or catalyst, as reported elsewhere. © 2000 American Institute of Physics.


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