TITLE

Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration

AUTHOR(S)
Visconti, P.; Jones, K. M.; Reshchikov, M. A.; Yun, F.; Cingolani, R.; Morkoc¸, H.; Park, S. S.; Lee, K. Y.
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/4/2000, Vol. 77 Issue 23
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A free-standing 300-μm-thick GaN template grown by hydride vapor phase epitaxy has been characterized for its structural and optical properties using x-ray diffraction, defect delineation etch followed by imaging with atomic force microscopy, and variable temperature photoluminescence. The Ga face and the N face of the c-plane GaN exhibited a wide variation in terms of the defect density. The defect concentrations on Ga and N faces were about 5x10[sup 5] cm[sup -2] for the former and about 1x10[sup 7] cm[sup -2] for the latter. The full width at half maximum of the symmetric (0002) x-ray diffraction peak was 69 and 160 arc sec for the Ga and N faces, respectively. That for the asymmetric (10-14) peak was 103 and 140 arc sec for Ga and N faces, respectively. The donor bound exciton linewidth as measured on the Ga and N faces (after a chemical etching to remove the damage) is about 1 meV each at 10 K. Instead of the commonly observed yellow band, this sample displayed a green band, which is centered at about 2.44 eV. © 2000 American Institute of Physics.
ACCESSION #
4413090

 

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