Resonant Raman scattering in self-organized InAs/GaAs quantum dots

Heitz, R.; Born, H.; Hoffmann, A.; Bimberg, D.; Mukhametzhanov, I.; Madhukar, A.
December 2000
Applied Physics Letters;12/4/2000, Vol. 77 Issue 23
Academic Journal
The exciton-phonon coupling in self-organized InAs/GaAs quantum dots (QDs) is investigated under resonant excitation of the ground-state transition. First- and second-order phonon sidebands of the TO (30.3 meV) and LO (33.2 meV) modes of the strained InAs QDs as well as an interface (35.9 meV) mode are resolved. Huang-Rhys factors of 0.012, 0.026, and 0.006, respectively, indicate enhanced polar exciton-phonon coupling in such strained low-symmetry QDs. Time-resolved measurements support the local character of the phonon modes. © 2000 American Institute of Physics.


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