Excitonic properties of MgS/ZnSe quantum wells

Urbaszek, B.; Balocchi, A.; Bradford, C.; Morhain, C.; O'Donnell, C. B.; O'Donnell, C.B.; Prior, K. A.; Prior, K.A.; Cavenett, B. C.; Cavenett, B.C.
December 2000
Applied Physics Letters;12/4/2000, Vol. 77 Issue 23
Academic Journal
Magnetic field and temperature dependent measurements are used to study the excitonic properties of high quality ZnSe quantum wells in MgS barriers grown by molecular beam epitaxy. The small inhomogeneous broadening of the samples allows the observation of higher excited exciton states. Due to the large difference in band gap between ZnSe and MgS a value of 43.9 meV was measured for the exciton binding energy which is the largest reported for this material system. The full width at half maximum of the heavy hole transitions is measured as a function of temperature and the broadening of the excitonic transitions in narrow quantum wells is reduced compared to the ZnSe bulk value due to the expected reduction in the LO-phonon scattering. © 2000 American Institute of Physics.


Related Articles

  • Room-temperature blue lasing action in (Zn,Cd)Se/ZnSe optically pumped multiple quantum well structures on lattice-matched (Ga,In)As substrates. Jeon, H.; Ding, J.; Nurmikko, A. V.; Luo, H.; Samarth, N.; Furdyna, J. K.; Bonner, W. A.; Nahory, R. E. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2413 

    We report on studies of optically pumped laser action in (Zn,Cd)Se/ZnSe multiple quantum well structures prepared by molecular beam epitaxy on lattice-matched bulk (Ga,In)As substrates. Room-temperature lasing under pulsed excitation with threshold pump intensity at I≊500 kW/cm2 has been...

  • Internal photoluminescence and lifetime of light-emitting diodes on conductive ZnSe substrates. Wenisch, H.; Fehrer, M.; Ohkawa, K.; Hommel, D.; Prokesch, M.; Rinas, U.; Hartmann, H. // Journal of Applied Physics;11/1/1997, Vol. 82 Issue 9, p4690 

    Reports on the molecular beam epitaxial growth of green and blue light-emitting diodes on conductive ZnSe substrates. Reduction of the resistivity of the (001)-oriented ZnSe wafers; Dependence of the intensity of an additional orange band on the wavelength of the multi-quantum-well emission;...

  • Molecular beam epitaxy of p-type conducting ZnSe and ZnSSe by simple nitrogen gas doping without.... Hishida, Yuji; Yoshie, Tomoyuki // Applied Physics Letters;7/10/1995, Vol. 67 Issue 2, p270 

    Investigates the molecular beam epitaxy of p-type conducting zinc selenide and zinc-sulfur selenide. Application of simple nitrogen gas doping technique without plasma activation; Factors affecting the p-type conduction in the N[sub 2]-gas doped zinc selenide; Fabrication of light emitting...

  • Gas-source molecular beam epitaxy of ZnSe using elemental Zn and hydrogen selenide. Ohtsuka, Takeo; Horie, Kayoko; Akiyama, Naoki; Yao, Takafumi // Journal of Applied Physics;11/15/1995, Vol. 78 Issue 10, p6006 

    Deals with a study which examined the growth of unintentionally doped zinc selenide by gas-source molecular beam epitaxy using zinc and thermally cracked hydrogen selenide. Electrical and optical properties of zinc selenide epilayers; Experimental procedures; Growth rate of zinc selenide epilayers.

  • Doping of ZnSe during molecular beam epitaxial growth using an atomic phosphorus source. Calhoun, L. C.; Park, R. M. // Journal of Applied Physics;1/1/1999, Vol. 85 Issue 1, p490 

    Investigates the phosphorous doping of zinc selenide (ZnSe) during molecular beam epitaxial growth. Use of an atomic phosphorus (P) source designed for elemental phosphorus handling; Characterization of the atomic phosphorus source; Analysis of photoluminescence of ZnSe:P films.

  • MgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55 µm. Guopeng Chen; De Jesus, Joel; Tamargo, Maria C.; Aidong Shen // Applied Physics Letters;12/8/2014, Vol. 105 Issue 23, p1 

    The authors report the observation of intersubband (ISB) transitions in the optical communication wavelength region in MgSe/ZnSe/CdSe coupled quantum wells (QWs). The coupled QWs were grown on InP substrates by molecular beam epitaxy. By inserting ZnSe layers to compensate the strain, samples...

  • ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy. Chan, Y.F.; Duan, X.F.; Chan, S.K.; Sou, I.K.; Zhang, X.X.; Wang, N. // Applied Physics Letters;9/29/2003, Vol. 83 Issue 13, p2665 

    We report molecular-beam epitaxy growth of single crystalline ZnSe nanowires with uniform diameters (∼10 nm) on GaP(111) substrates. The growth process was based on the Au-catalyzed vapor-liquid-solid deposition. As determined by electron microdiffraction and high-resolution transmission...

  • Molecular beam epitaxial growth of high quality ZnSe on (100) Si. Park, R. M.; Mar, H. A. // Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p529 

    ZnSe films have been grown by molecular beam epitaxy for the first time on argon ion sputtered and annealed (100) Si substrates, the simultaneous sputtering and annealing process being performed at a substrate temperature of 400 °C. The sputtered and annealed Si substrates were atomically...

  • Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping. Mitsuyu, T.; Ohkawa, K.; Yamazaki, O. // Applied Physics Letters;11/17/1986, Vol. 49 Issue 20, p1348 

    Low-energy ion doping of nitrogen has been employed in the molecular beam epitaxial (MBE) growth of ZnSe on GaAs substrates in an attempt to obtain p-type crystals. Low-temperature photoluminescence (PL) measurements of the N-doped ZnSe indicated a formation of shallow acceptors with an...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics