TITLE

Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy

AUTHOR(S)
Ko, H. J.; Ko, H.J.; Chen, Y. F.; Chen, Y.F; Hong, S. K.; Hong, S.K.; Wenisch, H.; Yao, T.; Look, D. C.; Look, D.C.
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/4/2000, Vol. 77 Issue 23
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the structural and optical properties of Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. The carrier concentration in Ga-doped ZnO films can be controlled from 1.33x10[sup 18]/cm[sup 3] to 1.13x10[sup 20]/cm[sup 3]. Despite high Ga incorporation, the linewidth of (0002) ω-rocking curves of Ga-doped ZnO films still lies in the range from 5 to 15 arc min. Photoluminescence (PL) spectra of Ga-doped ZnO films show dominant near-bandedge emission with negligibly weak deep-level emission, independent of carrier concentration. The PL spectrum exhibits a new emission line at 3.358 eV, which corresponds to exciton emission bound to a Ga donor. To avoid degradation of the PL intensity, the maximum dopability of Ga in ZnO is determined to be around 2.6x10[sup 19]/cm[sup 3]. © 2000 American Institute of Physics.
ACCESSION #
4413084

 

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