1.26 μm intersubband transitions in In[sub 0.3]Ga[sub 0.7]As/AlAs quantum wells

Garcia, César Pascual; De Nardis, Andrea; Pellegrini, Vittorio; Jancu, Jean Marc; Beltram, Fabio; Mu¨eller, Bernhard H.; Sorba, Lucia; Franciosi, Alfonso
December 2000
Applied Physics Letters;12/4/2000, Vol. 77 Issue 23
Academic Journal
We observed room-temperature intersubband transitions at 1.26 μm in n-doped type-II In[sub 0.3]Ga[sub 0.7]As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain the shortest wavelength intersubband transition ever achieved in a semiconductor system. The corresponding transitions occur between the first confined electronic levels of the well following mid-infrared optical pumping of electrons from the barrier X- valley into the well ground state. © 2000 American Institute of Physics.


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