Gap state formation during the initial oxidation of Si(100)-2x1

Bitzer, T.; Rada, T.; Richardson, N. V.; Richardson, N.V.; Dittrich, T.; Koch, F.
December 2000
Applied Physics Letters;12/4/2000, Vol. 77 Issue 23
Academic Journal
High-resolution electron energy loss spectroscopy and photoluminescence measurements have been used to follow the formation of gap states during the initial oxidation of Si(100)-2x1 at room temperature. We find strong indications that gap states are already induced after the adsorption of 0.002 L of molecular oxygen on Si(100)-2x1. It is demonstrated that prolonged exposures of clean and dehydrogenated oxide films on Si(100) to H[sub 2]O at room temperature decrease the density of gap states significantly. © 2000 American Institute of Physics.


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