TITLE

Microfour-point probe for studying electronic transport through surface states

AUTHOR(S)
Petersen, C. L.; Petersen, C.L.; Grey, F.; Shiraki, I.; Hasegawa, S.
PUB. DATE
December 2000
SOURCE
Applied Physics Letters;12/4/2000, Vol. 77 Issue 23
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Microfour-point probes integrated on silicon chips have been fabricated with probe spacings in the range 4-60 μm. They provide a simple robust device for electrical transport measurements at surfaces, bridging the gap between conventional macroscopic four-point probes and scanning tunneling microscopy. Measurements on Si(111) surfaces in ultrahigh vacuum reveal that the Si(111)-&sqrt;3x&sqrt;3-Ag structure induced by a monolayer of Ag atoms has a four-point resistance two orders of magnitude lower than that of the Si(111)-7x7 clean surface. We attribute this remarkable difference to direct transport through surface states, which is not observed on the macroscopic scale, presumably due to scattering at atomic steps. © 2000 American Institute of Physics.
ACCESSION #
4413077

 

Related Articles

  • Highly conductive diamond probes for scanning spreading resistance microscopy. Hantschel, T.; Niedermann, P.; Trenkler, T.; Vandervorst, W. // Applied Physics Letters;3/20/2000, Vol. 76 Issue 12, p1603 

    Scanning spreading resistance microscopy (SSRM) is a powerful method for the characterization of Si semiconductor devices based on atomic force microscopy (AFM). It requires conductive probe tips made of doped diamond. Although various solid diamond probes have been fabricated, they could not...

  • A fiber-mounted, micromachined photoconductive probe with 15 nV/Hz1/2 sensitivity. Lai, Richard K.; Hwang, Jiunn-Ren; Nees, John; Norris, Theodore B.; Whitaker, John F. // Applied Physics Letters;9/23/1996, Vol. 69 Issue 13, p1843 

    We report the performance of a micromachined, photoconductive-sampling probe that is fabricated on low-temperature-grown GaAs and mounted on a single-mode optical fiber. The epitaxial probe has a temporal resolution of 3.5 ps, a spatial resolution of 7 μm, and a sensitivity of 15 nV/(Hz)1/2...

  • A probe into shrinking geometries. Yeates, Harry // Electronics Weekly;2/13/2002, Issue 2039, p26 

    Assesses the changes in the production of integrate circuits, demanding the trend high speed data acquisition technologies. Role of high capacity mobile telecommunication and datacommunication applications in meeting the trend; Typical approaches to probe technologies; Requirements for high...

  • Film determines probe accuracy. Black, Sol // Test & Measurement World;Mar2002, Vol. 22 Issue 3, p16 

    Presents tips for in-circuit testing using the test-fixture probes from Sensor Products. Specifications of the films; Guidelines for its application; Calculation of the pressure ranges in in-circuit-test applications.

  • A Method to Solve the Probe Load Effection in the High Speed Digital Circuit. Yi Xie; Jianhong Zhou; Changle Lu // Enformatika;2006, Vol. 17, p259 

    The measuring result has much business with the performance of the oscilloscope probe. First we analyze the probe load effection, and then present a method to solve the problem by using the probe attenuator. After that in order to identify the accuracy of the theory, we do a careful detailed...

  • Don't sweat the small stuff. Travis, Bill // EDN;07/22/99, Vol. 44 Issue 15, p109 

    Introduces probing-and-testing systems for integrated circuits in the United States. Includes MicroGripper family by Emulation Technology; SMD Test Tweezer by Pomona; Multi-probe system and HP Wedge by Hewlett-Packard; PolyBGA by Emulation Solutions; Other probes by Tektronix and FW Bell.

  • Wafer Probing Technologies Require Unique Devices. Scharrer, Carl // R&D Magazine;Dec2002, Vol. 44 Issue 12, p59 

    Presents a guide for measuring the wafer-level probing of high-frequency devices. Information on the probe card, a primary consumable for wafer level testing; Ways of improving probing and testability; Details on several probe technologies that are suitable for high-frequency devices. INSET:...

  • In situ study of the thermal decomposition of B2H6 by combining spectroscopic ellipsometry and Kelvin probe measurements. Roca i Cabarrocas, P.; Kumar, Satyendra; Drevillon, B. // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3286 

    Presents an in situ study of the thermal decomposition of B[sub2]H[sub6] by combining spectroscopic ellipsometry and Kelvin probe measurements. Instrument used for deposition of amorphous silicon solar films; Influence of the total pressure on the thermal decomposition of the...

  • Optical probes test parts others cannot reach. Miles, Dean // Electronics Weekly;10/19/2016, Issue 2684, p18 

    The article focuses on use of an isolated probe to overcome challenges regarding common mode interference measurement; and efforts of engineers for power device designs involving gallium nitride (GaN) and silicon carbide (SiC) technologies.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics