Microfour-point probe for studying electronic transport through surface states

Petersen, C. L.; Petersen, C.L.; Grey, F.; Shiraki, I.; Hasegawa, S.
December 2000
Applied Physics Letters;12/4/2000, Vol. 77 Issue 23
Academic Journal
Microfour-point probes integrated on silicon chips have been fabricated with probe spacings in the range 4-60 μm. They provide a simple robust device for electrical transport measurements at surfaces, bridging the gap between conventional macroscopic four-point probes and scanning tunneling microscopy. Measurements on Si(111) surfaces in ultrahigh vacuum reveal that the Si(111)-&sqrt;3x&sqrt;3-Ag structure induced by a monolayer of Ag atoms has a four-point resistance two orders of magnitude lower than that of the Si(111)-7x7 clean surface. We attribute this remarkable difference to direct transport through surface states, which is not observed on the macroscopic scale, presumably due to scattering at atomic steps. © 2000 American Institute of Physics.


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