Molecular beam epitaxy of MnAs/ZnSe hybrid ferromagnetic/semiconductor heterostructures

Berry, J. J.; Berry, J.J.; Chun, S. H.; Chun, S.H.; Ku, K. C.; Ku, K.C.; Samarth, N.; Malajovich, I.; Awschalom, D. D.; Awschalom, D.D.
December 2000
Applied Physics Letters;12/4/2000, Vol. 77 Issue 23
Academic Journal
We report the use of molecular beam epitaxy to create hybrid ferromagnetic/semiconductor heterostructures composed of MnAs and ZnSe, with a Curie temperature of 325 K. The presence of a ZnSe buffer layer exclusively stabilizes the type-B orientation of MnAs, in which the (1¯101) MnAs and (001) ZnSe planes are parallel. Single-phase type-B αMnAs/ZnSe heterostructures yield magnetic properties comparable to those reported in the literature for MnAs/GaAs heterostructures. Variations in growth conditions also permit the stabilization of a strained, nonferromagnetic phase that can coexist with the ferromagnetic phase even at room temperature. © 2000 American Institute of Physics.


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