Switch-on transient behavior in low-temperature polycrystalline silicon thin-film transistors

Bavidge, N.; Boero, M.; Migliorato, P.; Migliorato, M.; Shimoda, T.
December 2000
Applied Physics Letters;12/4/2000, Vol. 77 Issue 23
Academic Journal
We report upon the measurement and simulation of the switch-on transient of polycrystalline silicon (poly-Si) thin-film transistors. The measurement of the switch-on transient reveals an unexpectedly long transient that cannot be explained by the theory adopted for single-crystal silicon-on-insulator (SOI) devices. Contrary to the SOI case, the transient is seen to increase with source-drain voltage. In order to explain the experimental findings, we have performed simulations of the transient and found that the results are heavily dependent upon the density of states in the band gap and their capture cross sections. Only when energy-dependent cross sections are adopted do the calculations correctly reproduce the steady-state and overshoot currents, and also the transient duration. A physical interpretation of this phenomenon is presented. © 2000 American Institute of Physics.


Related Articles

  • Laser induced implanted oxide (LI[sup 2]Ox) and polycrystalline silicon film simultaneously.... Cheol-Min Park; Byung-Hyuk Min // Applied Physics Letters;1/20/1997, Vol. 70 Issue 3, p372 

    Proposes a method in forming the gate oxide and recrystallizing the polycrystalline silicon (poly-Si) active layer simultaneously. Characteristics of poly-Si thin film transistors; Discussion on the recrystallization of poly-Si film during irradiation of excimer lasers; Injection of oxygen ion...

  • Polycrystalline Si thin-film transistors fabricated at ≤800 °C: Effects of grain size and {110} fiber texture. Kung, K. T.-Y.; Reif, R. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1503 

    Examines the effects of enlarged grain size and enhanced {110} fiber texture on polycrystalline silicon (Si) thin film transistors (TFT) performance. Information on the technical applications of polycrystalline Si TFT; Techniques that can be used in reducing grain-boundary effects; Details of...

  • Output characteristics of short-channel polycrystalline silicon thin-film transistors. Dimitriadis, C. A.; Tassis, D. H. // Journal of Applied Physics;3/1/1995, Vol. 77 Issue 5, p2177 

    Provides information on a study which presented an analytical model for the turn-on current-voltage characteristics of polycrystalline silicon thin-film transistors. Basis for the model; Way of determining the trap distribution and the device parameters involved in the model; Status of the...

  • A new self-aligned subtractive gate process for high-voltage and complementary polycrystalline silicon thin-film transistors. Wu, I-Wei; Huang, Tiao-Yuan; Lewis, Alan G.; Chuang, T. C.; Chiang, Anne // Journal of Applied Physics;11/1/1990, Vol. 68 Issue 9, p4900 

    Presents a study that proposed a self-aligned subtractive gate process by alternating several masking and polycrystalline silicon gate etching steps from a conventional process to build high-voltage and complementary thin-film transistors (TFT) on insulating substrates. Compatibility of the...

  • Noise performance of polycrystalline silicon thin-film transistors made by sequential lateral solidification. Bonfiglietti, A.; Valletta, A.; Mariucci, L.; Pecora, A.; Fortunato, G. // Applied Physics Letters;4/21/2003, Vol. 82 Issue 16, p2709 

    Low-frequency noise in polycrystalline silicon (polysilicon) thin-film transistors (TFTs), made using the sequential lateral solidification (SLS) technique, has been investigated. Two types of devices have been analyzed: SLS polysilicon TFTs, where the noise is dominated by the carrier number...

  • Analytical current–voltage model for polycrystalline-silicon thin-film transistors. Kimura, Mutsumi; Takizawa, Teruo; Inoue, Satoshi; Shimoda, Tatsuya // Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2326 

    An analytical current-voltage model has been developed for polycrystalline-silicon thin-film transistors. This model is based on the Poisson equation and the carrier density equation on the condition that the active layer is intrinsic and fabricated on the insulator substrate. The surface state...

  • High-performance thin-film transistors from optimized polycrystalline silicon films. Meakin, D. B.; Coxon, P. A.; Migliorato, P.; Stoemenos, J.; Economou, N. A. // Applied Physics Letters;6/29/1987, Vol. 50 Issue 26, p1894 

    The performance of thin-film transistors fabricated in unrecrystallized (small-grain) polcrystalline silicon is shown to be greatly improved by depositing the films at much lower pressures than normally used in the low-pressure chemical vapor deposition process. Electronic measurements on...

  • Transient photocurrent response in polycrystalline silicon thin films. Pandya, R.; Khan, B. A. // Journal of Applied Physics;10/15/1987, Vol. 62 Issue 8, p3244 

    Features a study that measured photocurrent transients in hydrogenated and unhydrogenated polycrystalline silicon thin-film transistors as a function of gate voltage. Schematic model for the gap state; Overview of the various trapping and recombination processes; Transient photoconductivity...

  • Correlation of the generation-recombination noise with reliability issues of polycrystalline silicon thin-film transistors. Hastas, N. A.; Dimitriadis, C. A.; Kamarinos, G. // Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p311 

    Low-frequency noise measurements have been carried out in polycrystalline silicon thin-film transistors (polysilicon TFTs) with different interface roughnesses. Independently of the interface roughness, the drain current noise can be ascribed to carrier number fluctuations. In devices with a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics