Stress tuning in crystal ion slicing to form single-crystal potassium tantalate films

Levy, M.; Osgood, R. M.; Osgood Jr., R.M.; Bhalla, A. S.; Bhalla, A.S.; Guo, R.; Cross, L. E.; Cross, L.E.; Kumar, A.; Sankaran, S.; Bakhru, H.
October 2000
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
Academic Journal
We report on the implementation of crystal ion slicing in potassium tantalate (KTaO[sub 3]). Deep-ion implantation is used to create a buried sacrificial layer in (001) single-crystal wafers of KTaO[sub 3]. 10-μm-thick single-crystal films have been fabricated by adjusting the stress level in the implantation damage layer to induce room-temperature etchless exfoliation. Crack propagation is found to depend critically on implantation dose, with a threshold dose for exfoliation near 1x10[sup 16] cm[sup -2]. A significant implantation-induced etch selectivity between the sacrificial layer and the rest of the sample is also found. Capacitance measurements show that the films exhibit a bulk-like dielectric constant and loss tangents below 0.01 at low temperatures. © 2000 American Institute of Physics.


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