X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices

Xu, S. J.; Xu, S.J.; Wang, H.; Li, Q.; Xie, M. H.; Xie, M.H.; Wang, X. C.; Fan, W. J.; Feng, S. L.
October 2000
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
Academic Journal
We report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measured x-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlattices annealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated. © 2000 American Institute of Physics.


Related Articles

  • Strain assisted inter-diffusion in GaN/AlN quantum dots. Leclere, C.; Fellmann, V.; Bougerol, C.; Cooper, D.; Gayral, B.; Proietti, M. G.; Renevier, H.; Daudin, B. // Journal of Applied Physics;Jan2013, Vol. 113 Issue 3, p034311 

    The structural and optical properties of high temperature-annealed superlattices of GaN quantum dots embedded in AlN barrier have been studied by a combination of X-ray techniques (reciprocal space mapping, multiwavelength anomalous diffraction, and diffraction anomalous fine structure), high...

  • Interaction of dopants with a host GaAs lattice: The case of low-temperature grown molecular beam epitaxial GaAs(Si). O’Hagan, S. P.; Missous, M.; Mottram, A.; Wright, A. C. // Journal of Applied Physics;6/1/1996, Vol. 79 Issue 11, p8384 

    Provides information on a study that reported results of x-ray diffraction, Hall effect and transmission electron microscopy measurements on low temperature grown silicon-doped superlattice structures. Methodology of the study; Results of the study.

  • Electrical properties of p–n junctions based on superlattices of AlN/AlGa(In)N. Kuryatkov, V.; K. Zhu; Borisov, B.; Chandolu, A.; Gherasoiu, Ìu.; Kipshidze, G.; Chu, S. N. G.; Holtz, M.; Kudryavtsev, Yu.; Asomoza, R.; Nikishin, S.; Temkin, H. // Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1319 

    Measurements of acceptor activation energy in p–n junctions based on superlattices of AlN (1.25 nm thick) and Al[sub 0.08]Ga[sub 0.92](In)N (0.5 nm thick), with the average AlN content greater than 0.6, are reported. Structural characteristics of superlattices were determined using...

  • Excitonic properties of isolated nanometer-sized InAs islands in a GaAs matrix. Alonso, M. I.; Ilg, Matthias; Ploog, K.; Trampert, A. // Journal of Applied Physics;8/1/1995, Vol. 78 Issue 3, p1980 

    Focuses on isolated nanometer-sized indium arsenide islands formed in a gallium arsenide matrix by direct epitaxial growth. Use of optical spectroscopy; Optical properties of quantum dot systems made of the materials system; Overview of the structural properties of the samples by...

  • Effects of 90 MeV carbon ion irradiation on cadmium oxide quantum dots. Virk, H. S. // Current Science (00113891);5/25/2011, Vol. 100 Issue 10, p1540 

    Cadmium oxide (CdO) quantum dots were synthesized in the laboratory by quenching method using CdO powder sintered at 900°C and ethyl alcohol kept at ice-cold temperature. X-ray diffraction studies revealed the NaCl cubic structure of CdO quantum dots. The CdO crystallite size was estimated to...

  • Structural characterization of InAs/GaAs quantum-dot nanostructures. Pal, D.; Towe, E.; Chen, S. // Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4133 

    We have performed high-resolution x-ray diffraction measurements on vertically aligned InAs/GaAs quantum-dot nanostructures. The measurements were carried out for both the symmetric (004) and asymmetric (113) and (224) Bragg reflections. Theoretical simulations of the rocking curves indicate...

  • Apoptosis induced by copper oxide quantum dots in cultured C2C12 cells via caspase 3 and caspase 7: a study on cytotoxicity assessment. Amna, Touseef; Ba, Hoa; Vaseem, M.; Hassan, M.; Khil, Myung-Seob; Hahn, Y.; Lee, Hak-Kyo; Hwang, I. // Applied Microbiology & Biotechnology;Jun2013, Vol. 97 Issue 12, p5545 

    We report herein the synthesis and characterization of copper oxide quantum dots and their cytotoxic impact on mouse C2C12 cells. The utilized CuO quantum dots were prepared by the one-pot wet chemical method using copper acetate and hexamethylenetetramine as precursors. The physicochemical...

  • PbSe quantum dots: Preparation in a high boiling point solvent and characterization. Du, Mingchun; Wang, Ying; Xu, Jingkun; Yang, Ping; Du, Yukou // Colloid Journal;Nov2008, Vol. 70 Issue 6, p720 

    A novel approach to preparing PbSe quantum dots in a high-boiling-point solvent (paraffin liquid) was studied. PbSe quantum dots obtained were transferred from the organic phase to aqueous phase. The PbSe samples were characterized by transmission electron microscopy, X-ray diffraction, and...

  • Structural and optical properties of InP quantum dots grown on GaAs(001). de Godoy, M. P. F.; Nakaema, M. K. K.; Iikawa, F.; Brasil, M. J. S. P.; Lopes, J. M. J.; Bortoleto, J. R. R.; Cotta, M. A.; Magalhães-Paniago, R.; Mörschbächer, M. J.; Fichtner, P. F. P. // Journal of Applied Physics;4/1/2007, Vol. 101 Issue 7, p073508 

    We investigated structural and optical properties of type-II InP/GaAs quantum dots using reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy, grazing incidence x-ray diffraction, and photoluminescence techniques. The InP dots present an...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics