Optical bandgap formation in AlInGaN alloys

Tamulaitis, G.; Kazlauskas, K.; Jurse˙nas, S.; Zukauskas, A.; Khan, M. A.; Yang, J. W.; Zhang, J.; Simin, G.; Shur, M. S.; Gaska, R.
October 2000
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
Academic Journal
We report on the spectral dynamics of the reflectivity, site-selectively excited photoluminescence, photoluminescence excitation, and time-resolved luminescence in quaternary AlInGaN epitaxial layers grown on GaN templates. The incorporation of a few percents of In into AlGaN causes significant smoothening of the band-bottom potential profile in AlInGaN layers owing to improved crystal quality. An abrupt optical bandgap indicates that a nearly lattice-matched AlInGaN/GaN heterostructure with large energy band offsets can be grown for high-efficiency light-emitting devices. © 2000 American Institute of Physics.


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