TITLE

Stress-induced anisotropy of phosphorous islands on gallium arsenide

AUTHOR(S)
Li, C. H.; Li, C.H.; Li, L.; Fu, Q.; Begarney, M. J.; Begarney, M.J.; Hicks, R. F.; Hicks, R.F.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The initial growth of (2x4) phosphorous islands on (4x2) terraces of gallium arsenide (001) has been studied. The islands grow anisotropically in the [110] direction with an aspect ratio of approximately 8 to 1 at moderate coverages. The distribution of island widths in the [1¯10] direction follows a Gaussian function. The mean width increases from 24±6 to 47±11 Å as the phosphorous coverage increases from 0.10 to 0.85 monolayers. Evidently, the island anisotropy is caused by stress imposed on the underlying gallium layer by the smaller, more tightly bound phosphorous dimers. © 2000 American Institute of Physics.
ACCESSION #
4412871

 

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