Lattice location of implanted Cu in highly doped Si

Wahl, U.; Vantomme, A.; Langouche, G.; Araújo, J. P.; Peralta, L.; Correia, J. G.
October 2000
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
Academic Journal
We report on the lattice location of ion-implanted [sup 67]Cu in p[sup +]- and n[sup +]-Si using the emission channeling technique. Following room-temperature implantation, the majority of Cu was found on near-substitutional sites in both p[sup +]- and n[sup +]-Si. Annealing in the temperature range 200-600 °C resulted in changes of near-substitutional Cu to random sites in p[sup +]-Si, while in n[sup +]- Si all of the near-substitutional Cu was converted to ideal substitutional lattice sites. The activation energy for dissociation is estimated to be 1.7-2.0 eV for near-substitutional Cu in p[sup +]-Si and 2.9(2) eV for ideal substitutional Cu in n[sup +]-Si. © 2000 American Institute of Physics.


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