Lattice location of erbium in high-fluence implanted silicon-germanium: Backscattering/channeling study

Touboltsev, V. S.; Ra¨isa¨nen, J.; Johnson, E.; Johansen, A.; Sarholt, L.
October 2000
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
Academic Journal
High-quality crystalline Si[sub 0.75]Ge[sub 0.25] alloy crystals were implanted with 70 keV Er[sup +] ions at 550 °C to a fluence of 10[sup 19] m[sup -2]. In situ Rutherford backscattering/channeling spectrometry with a 500 keV He[sup 2+] beam revealed Er atoms located on regular lattice sites of the host matrix. Angular scans taken around the <100>, <110>, and <111> crystallographic axes showed that a considerable fraction of Er atoms occupy tetrahedral interstitial sites. © 2000 American Institute of Physics.


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