TITLE

Lattice location of erbium in high-fluence implanted silicon-germanium: Backscattering/channeling study

AUTHOR(S)
Touboltsev, V. S.; Ra¨isa¨nen, J.; Johnson, E.; Johansen, A.; Sarholt, L.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-quality crystalline Si[sub 0.75]Ge[sub 0.25] alloy crystals were implanted with 70 keV Er[sup +] ions at 550 °C to a fluence of 10[sup 19] m[sup -2]. In situ Rutherford backscattering/channeling spectrometry with a 500 keV He[sup 2+] beam revealed Er atoms located on regular lattice sites of the host matrix. Angular scans taken around the <100>, <110>, and <111> crystallographic axes showed that a considerable fraction of Er atoms occupy tetrahedral interstitial sites. © 2000 American Institute of Physics.
ACCESSION #
4412866

 

Related Articles

  • Absence of solute drag in solidification. Kittl, J.A.; Aziz, M.J.; Brunco, D.P.; Thompson, M.O. // Applied Physics Letters;5/2/1994, Vol. 64 Issue 18, p2359 

    Examines the rapid solidification of silicon-arsenic alloys induced by pulsed laser melting (PLM). Absence of solute drag in the solidification process; Technique for measuring temperatures and velocities during PLM and rapid solidification; Use of Rutherford backscattering to determine the...

  • Observation of Misoriented Tertiary Dendrite Arms During Controlled Directional Solidification in Aluminum-7 Wt pct Silicon Alloys. Hoose, J.; Grugel, R.; Tewari, S.; Brush, L.; Erdmann, R.; Poirier, D. // Metallurgical & Materials Transactions. Part A;Dec2012, Vol. 43 Issue 12, p4724 

    Electron backscattered diffraction (EBSD) examination of transverse cross sections from a directionally solidified aluminum-7 wt pct silicon alloy revealed tertiary dendrite arms that appeared in place but in reality had orientations that significantly differed from their parent arm. The maximum...

  • Solid-phase epitaxial regrowth of Sb-implanted Si1-xGex strained layers: Kinetics and electrical properties. Atzmon, Z.; Eizenberg, M.; Shacham-Diamand, Y.; Mayer, J. W.; Schäffler, F. // Journal of Applied Physics;4/15/1994, Vol. 75 Issue 8, p3936 

    Focuses on a study which described the kinetics and electrical properties of solid-phase epitaxial regrown (SPEG) layers of antimony-implanted strained silicon-germanium alloys. Materials and procedure; Results of higher-dose implanted ion backscattering measurements; Information on the...

  • Effect of TiO[sub x] on the formation of titanium silicide layer. El Omari, H.; Boyeaux, J. P.; Errkik, A.; Lemiti, M.; Laugier, A. // Journal of Applied Physics;6/15/2003, Vol. 93 Issue 12, p9803 

    The Al/TiO[SUBx]/Si, Ti/TiO[SUBx]/Si, and Mo/TiO[SUBx]/Si interfaces are studied, before and after thermal treatment, by secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry (RBS), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and scanning electron...

  • Microstructural Properties of Nb-Si Alloys Investigated using EBSD at Large and Small Scale. Drawin, Stefan; Boivin, Denis; Petit, Pierre // Metallurgical & Materials Transactions. Part A;Mar2005, Vol. 36 Issue 3, p497 

    Texture and crystallographic orientation relationships in arc-melted hypoeutectic and hypereutectic binary Nb-Si alloys are investigated. Electron backscattered diffraction (EBSD) is used here in conventional conditions, i.e., at relatively high spatial resolution (<1 �m) for ~400 x 400...

  • Characteristics of rare-earth element erbium implanted in silicon. Tang, Y. S.; Heasman, K. C.; Gillin, W. P.; Sealy, B. J. // Applied Physics Letters;7/31/1989, Vol. 55 Issue 5, p432 

    Rare-earth element erbium implanted into silicon was studied by photoluminescence and Rutherford backscattering analysis. Two sets of luminescent bands related to the weakly crystal field split spin-orbit levels 4I13/2→4I15/2 of Er 3+ (4f 11) at different lattice sites having different...

  • Evidence of interstitial location of Er atoms implanted into silicon. Kozanecki, A.; Wilson, R.J. // Applied Physics Letters;9/25/1995, Vol. 67 Issue 13, p1847 

    Reports the interstitial location of Er atoms implanted with silicon. Use of Si:Er as a material for telecommunications; Analysis of Si:Er using Rutherford backscattering and channeling spectroscopy; Location of Er atoms in the interstitium.

  • Extraordinary optical gain from silicon implanted with erbium. Lourenço, M. A.; Gwilliam, R. M.; Homewood, K. P. // Applied Physics Letters;10/1/2007, Vol. 91 Issue 14, p141122 

    Here we report on measurements of optical gain at 1.5 μm in crystalline silicon. Gain is achieved by the incorporation of the rare earth erbium in silicon. A method was developed to enable the gain measurement in short silicon waveguides. Crucially, gain values obtained are significantly...

  • On erbium lattice location in ion implanted Si[sub 0.75]Ge[sub 0.25] alloy: Computer simulation of Rutherford backscattering/channeling. Touboltsev, V.; Jalkanen, P.; Räisänen, J.; Smulders, P. J. M. // Journal of Applied Physics;3/15/2003, Vol. 93 Issue 6, p3668 

    A high crystalline quality Si[sub 0.75]Ge[sub 0.25] alloy layer grown by chemical vapor deposition was implanted with 70 keV Er[sup +] ions to a fluence of 10[sup 15] cm[sup -2] at temperature of 550 °C. The implantation was found to result in an Er depth distribution with 1 at. % maximum...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics