TITLE

Improvement of the thermal stability of NiSi films by using a thin Pt interlayer

AUTHOR(S)
Liu, J. F.; Liu, J.F.; Chen, H. B.; Chen, H.B.; Feng, J. Y.; Feng, J.Y.; Zhu, J.
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of a thin interlayer of Pt on the stability of NiSi films on Si(111) substrates has been investigated. Both x-ray diffraction (XRD) data and sheet resistance measurements show a remarkable improvement in the thermal stability of NiSi due to the Pt interlayer. Detailed study on the XRD data shows PtSi and NiSi form a solid solution following a Vegard's law. It was found in Ni/Pt/Si samples that a transition in NiSi texture from (200)NiSi|(111)Si to (002)NiSi|(111)Si took place before the nucleation of NiSi[sub 2], which may contribute to the enhanced stability of NiSi films. © 2000 American Institute of Physics.
ACCESSION #
4412858

 

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