Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy

Xin, H. P.; Xin, H.P.; Tu, C. W.; Tu, C.W.
October 2000
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
Academic Journal
GaN[sub x]P[sub 1-x]/GaP multiple quantum wells (MQWs) with various N concentrations and well thicknesses were grown on (100) GaP substrates by gas source molecular beam epitaxy with a radio frequency nitrogen radical beam source. The N concentration and GaNP well thickness were determined by high-resolution x-ray rocking curve measurements and theoretical dynamical simulations. Photoluminescence (PL) measurements show that the PL wavelength of GaNP redshifts and the band edge emission integrated intensity increases with increasing N concentration, up to 2.5%. By using an infinite barrier model and various well thicknesses of GaN[sub 0.025]P[sub 0.975]/GaP MQWs, a large conduction-band effective mass m[sub c][sup *]∼0.9 m[sub e] is obtained for the GaN[sub 0.025]P[sub 0.975] alloy, indicating a mixing of Γ and X wave functions in the conduction band. © 2000 American Institute of Physics.


Related Articles

  • Nitrogen δ-doping for band engineering of GaAs-related quantum structures. Ishikawa, Fumitaro; Furuse, Shinichiro; Sumiya, Kengo; Kinoshita, Akihiro; Morifuji, Masato // Journal of Applied Physics;Mar2012, Vol. 111 Issue 5, p053512 

    We study energy-band engineering with nitrogen delta (δ)-doping in GaAs-related quantum structures. A tight-binding calculation indicates that the band structure can be engineered by introducing the one-dimensional doping profile of nitrogen into GaAs. Using molecular beam epitaxy, we prepare...

  • Band offsets in Zn1-xCdxSe/ZnSe multiple quantum wells. Pellegrini, Vittorio; Tredicucci, Alessandro; Beltram, Fabio; Vanzetti, Lia; Lazzarino, Marco; Franciosi, Alfonso // Journal of Applied Physics;1/15/1996, Vol. 79 Issue 2, p929 

    Presents a study that evaluated the conduction-band discontinuity in Zn[sub1-x]Cd[subx]Se/ZnSe multiple-quantum-well structures grown by molecular-beam epitaxy and pseudomorphically strained to ZnSe. Sketch of the conduction-band diagram in the case of predominant tunnel contribution (Low...

  • Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy. Liu, Po-Wei; Tsai, G.; Lin, H. H.; Krier, A.; Zhuang, Q. D.; Stone, M. // Applied Physics Letters;11/13/2006, Vol. 89 Issue 20, p201115 

    Detailed studies are reported on the photoluminescence of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing...

  • Nitrogen incorporation and optical studies of GaAsSbN/GaAs single quantum well heterostructures. Nunna, Kalyan; Iyer, S.; Wu, L.; Li, J.; Bharatan, S.; Wei, X.; Senger, R. T.; Bajaj, K. K. // Journal of Applied Physics;9/1/2007, Vol. 102 Issue 5, p053106 

    In this work, the effects of N incorporation on the optical properties of GaAsSbN/GaAs single quantum wells (SQWs) have been investigated using temperature, excitation, and magnetic dependencies of photoluminescence (PL) characteristics. These layers were grown in an elemental solid source...

  • Room-temperature photoluminescence times in a GaAs/AlxGa1-xAs molecular beam epitaxy multiple quantum well structure. Fouquet, J. E.; Siegman, A. E. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p280 

    Time-resolved photoluminescence measurements at room temperature of the n = 1 heavy hole transition in a GaAs/Al[sub x]Ga[sub 1-x] As multiple quantum well structure reveal a single-exponential decay with τ ≈ 1 ns over a wide range of excitation densities. Time-integrated...

  • Photoluminescence study of Si1-yCy/Si quantum well structures grown by molecular beam epitaxy. Brunner, K.; Eberl, K.; Winter, W.; Jin-Phillipp, N. Y. // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p91 

    Low-temperature photoluminescence (PL) spectroscopy is applied to investigate pseudomorphic Si1-yCy/Si quantum well structures grown by solid-source molecular beam epitaxy on Si substrates. The influence of substrate temperature during growth, growth rate, C content, and layer width on PL...

  • Solid-immersion photoluminescence microscopy of carrier diffusion and drift in facet-growth GaAs quantum wells. Yoshita, Masahiro; Baba, Motoyoshi; Koshiba, Shyun; Sakaki, Hiroyuki; Akiyama, Hidefumi // Applied Physics Letters;11/16/1998, Vol. 73 Issue 20 

    Carrier diffusion and drift in facet-growth quantum wells (QWs) on mesa-patterned substrates by molecular beam epitaxy was studied by high-resolution microscopic photoluminescence spectroscopy and imaging using a solid immersion lens at low temperatures. Under point excitation,...

  • Graduated heterojunction in GaAs/AlAs quantum wells. Proctor, M.; Oelgart, G.; Rhan, H.; Reinhart, F.-K. // Applied Physics Letters;6/6/1994, Vol. 64 Issue 23, p3154 

    Examines the GaAs/AlAs multiple quantum wells grown by molecular beam epitaxy. Use of x-ray diffraction, photoluminescence excitation and emission; Generation of the well width and period fluctuation of multiple quantum wells; Transition energies of excitonic transitions.

  • Demonstration of quantum confinement in InSb-In[sub 1-x]Al[sub x]Sb multiquantum wells using.... Saker, M.K.; Whittaker, D.M. // Applied Physics Letters;8/29/1994, Vol. 65 Issue 9, p1118 

    Describes the observation of quantum confinement using photoluminescence in multiquantum well samples grown by molecular beam epitaxy. Examination of quantum well samples; Various concentration of aluminum in the barriers; Behavior of the upshifted luminescence energies; Potential of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics