Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy

Tournié, E.; Pinault, M.-A.; Vézian, S.; Massies, J.; Tottereau, O.
October 2000
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
Academic Journal
We have investigated as-grown Ga[sub 1-x]In[sub x]N[sub y]As[sub 1-y]/GaAs quantum-well heterostructures (QWHs) prepared by solid-source molecular-beam epitaxy (SS-MBE). We show that the QWH properties appear to depend strongly on the growth technique and that SS-MBE emerges as a technique of choice for growing these QWHs. We demonstrate photoluminescence emission at wavelength as long as 1.43 μm at 295 K, and up to 1.68 μm at 10 K. This shows that development of 1.55 μm optoelectronics based on the Ga[sub 1-x]In[sub x]N[sub y]As[sub 1-y]/GaAs materials system may now be reasonably thought of. © 2000 American Institute of Physics.


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