TITLE

Boron penetration in p[sup +] polycrystalline-Si/Al[sub 2]O[sub 3]/Si metal-oxide-semiconductor system

AUTHOR(S)
Park, Dae-Gyu; Dae-Gyu Park; Cho, Heung-Jae; Heung-Jae Cho; Yeo, In-Seok; In-Seok Yeo; Roh, Jae-Sung; Jae-Sung Roh; Hwang, Jeong-Mo; Jeong-Mo Hwang
PUB. DATE
October 2000
SOURCE
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a flat band voltage instability of a p[sup +] polycrystalline-Si (poly-Si)/Al[sub 2]O[sub 3]/n-Si metal-oxide-semiconductor (MOS) system due to boron penetration. The flat band voltage shift of the p[sup +] poly-Si/Al[sub 2]O[sub 3]/n-Si MOS capacitor determined by capacitance-voltage measurement was ∼1.54 V, corresponding to a p-type dopant level of 8.8x10[sup 12] B ions/cm[sup 2] as the activation temperature increased from 800 to 850 °C. Noticeable boron diffusion into the n-type Si channel was also observed by secondary ion mass spectroscopy with activation annealing above 850 °C. Incorporation of an ultrathin (∼5 Å) silicon oxynitride interlayer between Al[sub 2]O[sub 3] and Si was effective in blocking B penetration, reducing the flat band shift to ∼90 mV. © 2000 American Institute of Physics.
ACCESSION #
4412847

 

Related Articles

  • Modeling the memory retention characteristics of silicon-nitride-oxide-silicon nonvolatile transistors in a varying thermal environment. McWhorter, P. J.; Miller, S. L.; Dellin, T. A. // Journal of Applied Physics;8/15/1990, Vol. 68 Issue 4, p1902 

    Presents a study that assessed the memory retention characteristics of silicon-nitride-oxide-silicon (SNOS) nonvolatile memory devices. Comparison between a metal-oxide-semiconductor transistor and an SNOS transistor; Examination of a qualitative description of the SNOS operation; Details of...

  • Physics update. Schewe, Philip F. // Physics Today;Apr97, Vol. 50 Issue 4, p9 

    Reports on the single-electron memory transistor developed at the University of Minnesota. How information is stored in the Minnesota transistor; Dot silicon features and ability; Similarity of the device with metal oxide semiconductor transistor.

  • Location of holes in silicon-rich oxide as memory states. Crupi, I.; Lombardo, S.; Rimini, E.; Gerardi, C.; Fazio, B.; Melanotte, M. // Applied Physics Letters;11/4/2002, Vol. 81 Issue 19, p3591 

    The induced changes of the flatband voltage by the location of holes in a silicon-rich oxide (SRO) film sandwiched between two thin SiO[sub 2] layers [used as gate dielectric in a metal–oxide–semiconductor (MOS) capacitor] can be used as the two states of a memory cell. The...

  • Charge storage characteristics in metal-oxide-semiconductor memory structure based on gradual Ge1-xSix/Si heteronanocrystals. Lu, Jin; Zuo, Zheng; Chen, Yubin; Shi, Yi; Pu, Lin; Zheng, Youdou // Applied Physics Letters;1/7/2008, Vol. 92 Issue 1, p013105 

    Charge storage characteristics in the metal-oxide-semiconductor memory structure based on gradual Ge1-xSix/Si heteronanocrystals (HNCs) have been investigated by using capacitance-voltage measurements. The gradual Ge1-xSix/Si HNCs on ultrathin SiO2 were fabricated through combining...

  • A memory cell with single-electron and metal-oxide-semiconductor transistor integration. Durrani, Zahid A.K.; Irvine, Andrew C.; Ahmed, Haroon; Nakazato, Kazuo // Applied Physics Letters;3/1/1999, Vol. 74 Issue 9, p1293 

    Fabricates a single-electron transistor (SET) memory cell with metal-oxide-semiconductor field-effect transistor in silicon-on-insulator material. States of the memory-node voltage, separated by the single electron transistor Coulomb gap; Drain-source current as a function of the gate voltage;...

  • Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate. Yu, Xiongfei; Zhu, Chunxiang; Li, M. F.; Chin, Albert; Du, A. Y.; Wang, W. D.; Kwong, Dim-Lee // Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2893 

    The thermal stability and electrical characteristics of HfTaO gate dielectric with polycrystalline-silicon gate have been investigated. The incorporation of Ta into HfO2 enhances the crystallization temperature of film dramatically. Transmission electron microscopy micrographs confirm that HfTaO...

  • Suppression of boron penetration by polycrystalline Si[sub 1-x-y]Ge[sub x]C[sub y] in metal-... C.L. Chang; Sturm, J.C. // Applied Physics Letters;4/26/1999, Vol. 74 Issue 17, p2501 

    Studies the suppression of boron penetration by polycrystalline Si[sub 1-x-y]Ge[sub x]C[sub y] layer in metal-oxide-semiconductor structures. Reduction of the chemical potential of boron in polycrystalline Si[sub 1-x-y]Ge[sub x]C[sub y] by the addition of carbon.

  • Boron penetration and thermal instability of p[sup +] polycrystalline-Si/ZrO[sub 2]/SiO[sub 2]/n-Si metal-oxide-semiconductor structures. Park, Dae-Gyu; Lim, Kwan-Yong; Cho, Heung-Jae; Kim, Joong-Jung; Yang, Jun-Mo; Ko, Jung-Kyu; Yeo, In-Seok; Park, Jin Won; de Waard, Henk; Tuominen, M. // Journal of Applied Physics;1/1/2002, Vol. 91 Issue 1, p65 

    We report boron penetration and thermal instability of p[sup +] polycrystalline-Si (poly-Si)/ZrO[sub 2] (100 Å)/SiO[sub 2] (∼7 Å)/n-Si metal-oxide-semiconductor (MOS) structures. The flatband voltage shift (ΔV[sub FB]) of the p[sup +] poly-Si/ZrO[sub 2]/SiO[sub 2]/n-Si MOS...

  • Microscopic model for enhanced dielectric constants in low concentration SiO[sub 2]-rich noncrystalline Zr and Hf silicate alloys. Lucovsky, G.; Rayner, G. B.; Rayner Jr., G.B. // Applied Physics Letters;10/30/2000, Vol. 77 Issue 18 

    Dielectric constants, k, of Zr(Hf) silicate alloy gate dielectrics obtained from analysis of capacitance-voltage curves of metal-oxide-semiconductor capacitors with 3-6 at. % Zr(Hf) are significantly larger than estimates of k based on linear extrapolations between SiO[sub 2] and compound...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics