Boron penetration in p[sup +] polycrystalline-Si/Al[sub 2]O[sub 3]/Si metal-oxide-semiconductor system

Park, Dae-Gyu; Dae-Gyu Park; Cho, Heung-Jae; Heung-Jae Cho; Yeo, In-Seok; In-Seok Yeo; Roh, Jae-Sung; Jae-Sung Roh; Hwang, Jeong-Mo; Jeong-Mo Hwang
October 2000
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
Academic Journal
We report a flat band voltage instability of a p[sup +] polycrystalline-Si (poly-Si)/Al[sub 2]O[sub 3]/n-Si metal-oxide-semiconductor (MOS) system due to boron penetration. The flat band voltage shift of the p[sup +] poly-Si/Al[sub 2]O[sub 3]/n-Si MOS capacitor determined by capacitance-voltage measurement was ∼1.54 V, corresponding to a p-type dopant level of 8.8x10[sup 12] B ions/cm[sup 2] as the activation temperature increased from 800 to 850 °C. Noticeable boron diffusion into the n-type Si channel was also observed by secondary ion mass spectroscopy with activation annealing above 850 °C. Incorporation of an ultrathin (∼5 Å) silicon oxynitride interlayer between Al[sub 2]O[sub 3] and Si was effective in blocking B penetration, reducing the flat band shift to ∼90 mV. © 2000 American Institute of Physics.


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