Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique

Zhang, X.; Li, R. R.; Li, R.R.; Dapkus, P. D.; Dapkus, P.D.; Rich, D. H.; Rich, D.H.
October 2000
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
Academic Journal
A sparse nucleation process on sapphire (0001) substrates has been developed for the growth of GaN thin films. The density of nucleation sites is reduced to only 4x10[sup 4] cm[sup -2]. Based on this process, we performed direct lateral epitaxial overgrowth (LEO) of GaN by metalorganic chemical vapor deposition on patterned SiO[sub 2]/sapphire (0001) substrates. An aggregate lateral to vertical growth rate ratio of around 2:1 was achieved after the coalescence of the GaN stripes. Cathodoluminescence imaging shows strong and uniform near-band gap luminescence from LEO regions and confirms the improved quality of LEO GaN, which is further supported by atomic force microscopy analysis. © 2000 American Institute of Physics.


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