Ferroelectric properties of Pb[sub 1-3y/2]La[sub y](Zr[sub 0.4]Ti[sub 0.6])O[sub 3] structures with La concentration gradients

Boerasu, I.; Pintilie, L.; Kosec, M.
October 2000
Applied Physics Letters;10/2/2000, Vol. 77 Issue 14
Academic Journal
Graded ferroelectric (GF) structures were obtained by successive deposition of Pb[sub 1-3y/2]La[sub y](Zr[sub 0.4]Ti[sub 0.6])O[sub 3] films with different La contents on Pt/TiO[sub 2]Si substrates. The method used for deposition was sol gel. The final structure consists of four layers, starting from the Pt electrode to the top gold electrode: (1) no La; (2) 4% La; (3) 8% La; and (4) 12% La. Ferroelectric properties of the GF structure were investigated, and an anomalous shift of the hysteresis loop along the polarization axis was found. The sense of this shift depends on the initial direction of the ferroelectric polarization. The presence of hysteresis displacement "up" or "down" can be explained if the presence of a built-in charge in the GF structure is admitted. The built-in potential produced by this charge is computed using a simple theoretical model. © 2000 American Institute of Physics.


Related Articles

  • Statistical theory of hysteresis in ferroelectric materials. Boser, O. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1344 

    Develops a theory based on the model of random interactions between a large number of lattice defects and domain walls in ferroelectric materials. Theory of hysteresis in ferroelectric materials; Characteristic parameters of the hysteresis loop; Interaction between dopant ion and domain wall.

  • Temperature and electric field dependence of the dielectric property and domain evolution in [001]-oriented 0.34Pb(In1/2Nb1/2)O3-0.25Pb(Mg1/3Nb2/3)O3-0.41PbTiO3 single crystal. Chen, Y.; Lam, K. H.; Zhou, D.; Gao, X. S.; Dai, J. Y.; Luo, H. S.; Chan, H. L. W. // Journal of Applied Physics;Jan2011, Vol. 109 Issue 1, p014111 

    Ferroelectric domain structure and evolution, as well as phase transition, of [001]-oriented 34Pb(In1/2Nb1/2)O3-0.25Pb(Mg1/3Nb2/3)O3-0.41PbTiO3 single crystal has been studied through temperature and frequency-dependent relative permittivity characterization. Under dc bias, the transition...

  • Coexistence of ferroelectricity and antiferroelectricity in epitaxial PbZrO3 films with different orientations. Pintilie, Lucian; Boldyreva, Ksenia; Alexe, Marin; Hesse, Dietrich // Journal of Applied Physics;Jan2008, Vol. 103 Issue 2, p024101 

    The temperature dependence of the ferroelectric hysteresis and capacitance in PbZrO3 epitaxial films with (120)O and (001)O orientations was investigated in the 4.2–400 K temperature range. It was found that the films with (120)O orientation show a mixture of ferroelectric and...

  • Charge injection and polarization fatigue in ferroelectric thin films. Jiang, A. Q.; Lin, Y. Y.; Tang, T. A. // Journal of Applied Physics;Oct2007, Vol. 102 Issue 7, p074109 

    Typical experimental data of polarization fatigue in Pb(Zr,Ti)O3 thin films have been presented: (1) The coercive voltage Vc and the shape of the polarization-electric (P-E) hysteresis loop unnecessarily change with the number N of fatigue cycles except the remanent polarization; (2) the...

  • Modeling ferroelectric capacitors based on the dipole switching theory. Wang, Longhai; Yu, Jun; Wang, Yunbo; Peng, Gang; Liu, Feng; Gao, Junxiong // Journal of Applied Physics;5/15/2007, Vol. 101 Issue 10, p104505 

    In this paper, we derived a compact model for the description of the P–E hysteresis behavior based on the dipole switching theory. Simulation results show good agreement with the experiment for various hysteresis loops, and the mathematical description can be easily combined with an...

  • Characterization of the dielectric properties and alternating current conductivity of the SrBi5-xLaxTi4FeO18 (x=0, 0.2) compound. Almodovar, N. S.; Portelles, J.; Raymond, O.; Heiras, J.; Siqueiros, J. M. // Journal of Applied Physics;Dec2007, Vol. 102 Issue 12, p124105 

    Lanthanum-doped bismuth layer-structured ferroelectric ceramics SrBi5-xLaxTi4FeO18 (x=0,0.2) were prepared by the solid-state reaction method. X-ray diffraction patterns indicate that single phases were formed. Hysteresis loops at room temperature (20 °C) show that the La-doped ceramic...

  • Scaling for ferroelectric properties in La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O capacitors. Ramesh, R.; Dutta, B. // Applied Physics Letters;3/21/1994, Vol. 64 Issue 12, p1588 

    Examines the scaling of ferroelectric properties with the capacitor size using epitaxial heterostructures grown on silicon. Fabrication of the capacitor; Characteristics of the capacitors; Exploration of the effect of full-wafer processing; Analysis of the imprint characteristics of the 4-micro...

  • SrRuO[sub 3]/SrTiO[sub 3]/SrRuO[sub 3] heterostructures for magnetic tunnel junctions. Herranz, G.; Martınez, B.; Fontcuberta, J.; Sánchez, F.; Garcıa-Cuenca, M. V.; Ferrater, C.; Varela, M. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p8035 

    We report on the growth and characterization of SrRuO[SUB3] single layers and SrRuO[SUB3]/SrTiO[SUB3]/SrRuO[SUB3] heterostructures grown on SrTiO[SUB3](100) substrates. The thickness dependence of the coercivity was determined for these single layers. Heterostructures with barrier thickness...

  • Characteristic temperatures of exchange biased systems. Dobrynin, A. N.; Prozorov, R. // Journal of Applied Physics;8/15/2007, Vol. 102 Issue 4, p043902 

    Characteristic temperatures in ferromagnetic-antiferromagnetic exchange biased systems are analyzed. In addition to usual blocking temperature of exchange bias, TB, and the Néel temperature of an antiferromagnet, TN, the inducing temperature of exchange bias, Tind, has been recently proposed....


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics