Quantitative imaging of dielectric permittivity and tunability with a near-field scanning microwave microscope

Steinhauer, D. E.; Steinhauer, D.E.; Vlahacos, C. P.; Vlahacos, C.P.; Wellstood, F. C.; Wellstood, F.C.; Anlage, Steven M.; Canedy, C.; Ramesh, R.; Stanishevsky, A.; Melngailis, J.
July 2000
Review of Scientific Instruments;Jul2000, Vol. 71 Issue 7
Academic Journal
We describe the use of a near-field scanning microwave microscope to image the permittivity and tunability of bulk and thin film dielectric samples on a length scale of about 1 μm. The microscope is sensitive to the linear permittivity, as well as to nonlinear dielectric terms, which can be measured as a function of an applied electric field. We introduce a versatile finite element model for the system, which allows quantitative results to be obtained. We demonstrate use of the microscope at 7.2 GHz with a 370 nm thick Ba[sub 0.6]Sr[sub 0.4]TiO[sub 3] thin film on a LaAlO[sub 3] substrate. This technique is nondestructive and has broadband (0.1-50 GHz) capability. The sensitivity of the microscope to changes in permittivity is Δε[sub r]=2 at ε[sub r]=500, while the nonlinear dielectric tunability sensitivity is Δε[sub 113]=10[sup -3] (kV/cm)[sup -1]. © 2000 American Institute of Physics.


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