Confinement, overflow, and emission of holes on SiGe surface with Ge dots: Heterogeneous hole redistribution and its application to virtual dot manipulation

Ishii, Masashi; Dhesi, Sarnjeet S.; Hamilton, Bruce
August 2009
Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p093101
Academic Journal
The hole confinement in Ge dots fabricated on a wetting layer in Stranski–Krastanov (S-K) growth was directed by an applied bias. At medium bias voltage, the holes overflowed from the small dots, indicating a moderate potential barrier without a notch at the boundary. The electrostatic force of the confined holes attracted excessive holes to the wetting layer. The system was energetically stabilized by the formation of a “virtual dot” in an open space enclosed by dots. At a high bias voltage, the virtual dot disappeared since the holes in the wetting layer were emitted from the surface.


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