Gate tunable photoconductivity of p-channel Se nanowire field effect transistors

Zhi-Min Liao; Chong Hou; Qing Zhao; Li-Ping Liu; Da-Peng Yu
August 2009
Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p093104
Academic Journal
We have investigated the photoelectrical properties of p-type selenium nanowire field effect transistors. The hole concentrations are estimated to be 4.1×1017 and 2.5×1018 cm-3 for the device under dark and illumination, respectively. The photoelectrical on/off ratio can be tunable from 4 to 160 as the gate voltage decreases from 20 to -20 V.


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