Spatial variations in local switching parameters of ferroelectric random access memory capacitors

Wu, D.; Kunishima, I.; Roberts, S.; Gruverman, A.
August 2009
Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p092901
Academic Journal
Spatially resolved studies of the switching behavior of micrometer scale Pb(Zr,Ti)O3 capacitors have been performed by piezoresponse force microscopy (PFM). PFM spectroscopy and bias-dependent imaging of domain patterns have been used to investigate variability in local switching parameters and address the capacitor scaling effect on switching. It was found that average coercive voltage and imprint bias are independent of capacitor size and are similar to the corresponding parameters obtained by polarization hysteresis measurements. This can be attributed to the slow switching kinetics during quasistatic PFM measurements. The obtained results demonstrate a possibility of testing the submicron capacitors in real devices.


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