Gain-length scaling in quantum dot/quantum well infrared photodetectors

Yamanaka, T.; Movaghar, B.; Tsao, S.; Kuboya, S.; Myzaferi, A.; Razeghi, M.
August 2009
Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p093502
Academic Journal
The gain in quantum dot/quantum well infrared photodetectors is investigated. The scaling of the gain with device length has been analyzed, and the behavior agrees with the previously proposed model. We conclude that we understand the gain in the low bias region, but in the high field region, discrepancies remain. An extension of the gain model is presented to cover the very high electric field region. The high field data are compared to the extended model and discussed.


Related Articles

  • Efficient polymer-nanocrystal quantum-dot photodetectors. Difei Qi; Fischbein, Michael; Drndić, Marija; Šelmić, Sandra // Applied Physics Letters;2/28/2005, Vol. 86 Issue 9, p093103 

    We have realized highly efficient photodetectors based on composites of the semiconducting polymer poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene] and PbSe nanocrystal quantum dots. The external quantum efficiency in these devices is greater than 1 for electric fields...

  • Electrical control of the exciton spin in nitride semiconductor quantum dots. Sénès, Mathieu; Lagarde, Delphine; Smith, Katherine L.; Balocchi, Andrea; Hooper, Stewart E.; Amand, Thierry; Heffernan, Jonathan; Marie, Xavier // Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p223114 

    We report on the experimental evidence of the manipulation of the exciton spin in InGaN quantum dots through the application of an external electric field up to room temperature. Furthermore, we have found the exciton spin relaxation to be independent of temperature. These findings are highly...

  • Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dots. Klotz, F.; Jovanov, V.; Kierig, J.; Clark, E. C.; Rudolph, D.; Heiss, D.; Bichler, M.; Abstreiter, G.; Brandt, M. S.; Finley, J. J. // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053113 

    The electric field dependence of the exciton g factor and the fine structure splitting in self-assembled InGaAs/GaAs quantum dots grown via a flush-overgrowth technique is studied by photocurrent and photoluminescence experiments. Both the fine structure and the Zeeman splitting can be tuned...

  • Engineering quantum dots for electrical control of the fine structure splitting. Pooley, M. A.; Bennett, A. J.; Farrer, I.; Ritchie, D. A.; Shields, A. J. // Applied Physics Letters;7/15/2013, Vol. 103 Issue 3, p031105 

    We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample, we confirm that this energy splitting changes linearly over the field range we can access. We conclude that this...

  • Effects of contact space charge on the performance of quantum intersubband photodetectors. Barve, A. V.; Meesala, S.; Sengupta, S.; Kim, J. O.; Chakrabarti, S.; Krishna, S. // Applied Physics Letters;5/7/2012, Vol. 100 Issue 19, p191107 

    Highly non-uniform electric field exists in the active region of quantum intersubband devices, primarily due to the presence of PN junctions forming between heavily doped contact regions and non-intentionally doped barriers. Using a combination of experiments and theoretical simulations, we...

  • Temporal variation in photoluminescence from single InGaN quantum dots. Rice, James H.; Robinson, James W.; Jarjour, Anas; Taylor, Robert A.; Olier, Rachel A.; Briggs, G. Andrew D.; Kappers, Menno J.; Humphreys, Colin J. // Applied Physics Letters;5/17/2004, Vol. 84 Issue 20, p4110 

    We report measurements of optical transitions in single III/V (InGaN) quantum dots as a function of time. Temporal fluctuations in microphotoluminescence peak position and linewidth are demonstrated and attributed to spectral diffusion processes. The origin of this temporal variation is ascribed...

  • Singlet-triplet relaxation in SiGe/Si/SiGe double quantum dots. Wang, L.; Wu, M. W. // Journal of Applied Physics;Aug2011, Vol. 110 Issue 4, p043716 

    We study the singlet-triplet relaxation due to the spin-orbit coupling assisted by the electron-phonon scattering in two-electron SiGe/Si/SiGe double quantum dots in the presence of an external magnetic field in either Faraday or Voigt configuration. By explicitly including the electron-electron...

  • Tunnelling Transient Spectroscopy on self-assembled InAs Quantum Dots. Schramm, A.; Schulz, S.; Schaefer, J.; Heyn, Ch.; Hansen, W. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p763 

    We study electron tunnelling from self-assembled InAs quantum dots with time-resolved capacitance measurements at low temperature (T = 10 K). Within a simple WKB model the electric field dependence of the tunnelling rate is analyzed. The data reveal that tunnelling emission from s- and p-like...

  • Influence of Gaussian white noise on the frequency-dependent first nonlinear polarizability of doped quantum dot. Ganguly, Jayanta; Ghosh, Manas // Journal of Applied Physics;2014, Vol. 115 Issue 17, p174313-1 

    We investigate the profiles of diagonal components of frequency-dependent first nonlinear (βxxx and βyyy) optical response of repulsive impurity doped quantum dots. We have assumed a Gaussian function to represent the dopant impurity potential. This study primarily addresses the role of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics