Three-dimensional spin structure in exchange-biased antiferromagnetic/ferromagnetic thin films

Morales, R.; Vélez, M.; Petracic, O.; Roshchin, Igor V.; Li, Z.-P.; Batlle, X.; Alameda, J. M.; Schuller, Ivan K.
August 2009
Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p092503
Academic Journal
A coexistence of lateral and in-depth domain walls in antiferromagnet/ferromagnet (AF/FM) thin films exhibiting double hysteresis loops (DHLs) is demonstrated. Comparison of single and DHLs together with local and global measurements confirms the formation of two oppositely oriented domains in the AF that imprint a lateral domain structure into the FM layer. Most significantly, the magnetization reversal mechanism within each opposite domain takes place by incoherent rotation of spring-like domain walls extending through the Ni thickness. Therefore, complex three-dimensional domain walls are created perpendicular and parallel to the AF/FM interface in exchange biased systems.


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