A study on the temperature dependence of characteristics of phase change memory devices

Suyoun Lee; Doo Seok Jeong; Jeung-hyun Jeong; Wu Zhe; Young-Wook Park; Hyung-Woo Ahn; Won Mok Kim; Byung-ki Cheong
August 2009
Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p093504
Academic Journal
We investigated the temperature dependence of characteristics of phase change memory devices composed of Ge2Sb2Te5 (GST). We found that the RESET resistance (RR), SET resistance (RS), and SET time (tSET) decreased with increasing ambient temperature (Tamb.) while RESET current (IR) increased with Tamb. These results were explained in terms of the enhanced thermal activation of electrical conduction in GST and the increased thermal conductivity of the bottom electrode with Tamb.. Besides, threshold voltage (Vth) was found to decrease linearly with Tamb., seemingly in support of the relaxation semiconductor model and hopping-dominated transport model both of which predicted the existence of critical conductivity for threshold switching in chalcogenide glasses.


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