Influence of Si–N complexes on the electronic properties of GaAsN alloys

Jin, Y.; He, Y.; Cheng, H.; Jock, R. M.; Dannecker, T.; Reason, M.; Mintairov, A. M.; Kurdak, C.; Merz, J. L.; Goldman, R. S.
August 2009
Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p092109
Academic Journal
We have investigated the influence of Si–N complexes on the electronic properties of GaAsN alloys. The presence of Si–N complexes is suggested by a decrease in carrier concentration, n, with increasing N-composition, observed in GaAsN:Si films but not in modulation-doped heterostructures. In addition, for GaAsN:Te (GaAsN:Si), n increases substantially (minimally) with annealing-T, suggesting a competition between annealing-induced Si–N complex formation and a reduced concentration of N-related traps. Since Si–N complex formation is enhanced for GaAsN:Si growth with the (2×4) reconstruction, which has limited group V sites for As–N exchange, the (Si–N)As interstitial pair is identified as the dominant Si–N complex.


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