TITLE

Influence of Si–N complexes on the electronic properties of GaAsN alloys

AUTHOR(S)
Jin, Y.; He, Y.; Cheng, H.; Jock, R. M.; Dannecker, T.; Reason, M.; Mintairov, A. M.; Kurdak, C.; Merz, J. L.; Goldman, R. S.
PUB. DATE
August 2009
SOURCE
Applied Physics Letters;8/31/2009, Vol. 95 Issue 9, p092109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the influence of Si–N complexes on the electronic properties of GaAsN alloys. The presence of Si–N complexes is suggested by a decrease in carrier concentration, n, with increasing N-composition, observed in GaAsN:Si films but not in modulation-doped heterostructures. In addition, for GaAsN:Te (GaAsN:Si), n increases substantially (minimally) with annealing-T, suggesting a competition between annealing-induced Si–N complex formation and a reduced concentration of N-related traps. Since Si–N complex formation is enhanced for GaAsN:Si growth with the (2×4) reconstruction, which has limited group V sites for As–N exchange, the (Si–N)As interstitial pair is identified as the dominant Si–N complex.
ACCESSION #
44066572

 

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